Coupling Analysis on Microstructure and Residual Stress in Selective Laser Melting (SLM) with Varying Key Process Parameters
Abstract
:1. Introduction
2. Materials and Methods
2.1. Manufacturing Process
2.2. Test Methods
3. Results
3.1. Molten Pool Morphology
3.2. Grains and Orientation
3.3. Residual Stress
4. Discussion
5. Conclusions
- (1)
- Laser power has the main effect on the microstructure. As the power increases, the molten pool increases significantly and the crystalline grain is larger, which also causes a larger thermal stress and residual stress in a case where the other parameters remain unchanged.
- (2)
- The scanning speed also has a great influence on the microstructure of the forming part. The lower the scanning speed is, the longer the heating time of the molten pool, which leads to a larger geometrical size and crystallization and to an increase in residual stress when the other parameters remain the same.
- (3)
- The scanning mode, i.e., the length of the scanning track, also has a significant effect. In general, a short scanning trajectory has better organization and performance indicators.
- (4)
- The matching and coordination of the process parameters have a significant influence on the microstructure and mechanical properties of SLM forming, which can be evaluated by the accepted energy density. It was confirmed that reasonable matching of the relationship between the process parameters can obtain excellent forming properties, e.g., grain refinement and columnar grain, which presented as approximately directional solidification.
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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Samples | Laser Power | Scanning Speed | Scanning Strategy | Hatching Distance | Layer Thickness | Serial No. |
---|---|---|---|---|---|---|
1 | P = 160 W | s = 400 mm/s | striped | 0.1 mm | 50 μm | 11, 12, 13 |
2 | P = 160 W | s = 500 mm/s | striped | 0.1 mm | 50 μm | 21, 22, 23 |
3 | P = 160 W | s = 600 mm/s | striped | 0.1 mm | 50 μm | 31, 32, 33 |
4 | P = 160 W | s = 400 mm/s | chessboard | 0.1 mm | 50 μm | 41, 42, 43 |
5 | P = 160 W | s = 500 mm/s | chessboard | 0.1 mm | 50 μm | 51, 52, 53 |
6 | P = 160 W | s = 600 mm/s | chessboard | 0.1 mm | 50 μm | 61, 62, 63 |
7 | P = 200 W | s = 800 mm/s | striped | 0.1 mm | 50 μm | 71, 72, 73 |
8 | P = 200 W | s = 600 mm/s | striped | 0.1 mm | 50 μm | 81, 82, 83 |
9 | P = 200 W | s = 600 mm/s | chessboard | 0.1 mm | 50 μm | 91, 92, 93 |
A | P = 240 W | s = 800 mm/s | striped | 0.1 mm | 50 μm | A1, A2, A3 |
Rank | Different Laser Power | Different Scanning Speed | Different Scan Trajectories |
---|---|---|---|
1 | |||
2 | |||
3 | |||
4 | ———————— | ||
5 | ———————— | ———————— |
Method | Group 1 | Group 2 | Group 3 | Group 4 | Group 5 | |||||
---|---|---|---|---|---|---|---|---|---|---|
Power comparison | s = 600 mm/s; | s = 800 mm/s; Striped scanning | s = 600 mm/s; Chessboard scanning | ------ | ------ | |||||
P = 200 | P = 160 | P = 240 | P = 200 | P = 200 | P = 160 | |||||
421.7 | 199.3 | 444.7 | 285.8 | 324.4 | 122.6 | |||||
Speed comparison | P = 160 W; Striped scanning | P = 160 W; Striped scanning | P = 200 W; Striped scanning | P = 160 W; Chessboard scanning | P = 160 W; Chessboard scanning | |||||
s = 400 | s = 500 | s = 500 | s = 600 | s = 600 | s = 800 | s = 400 | s = 500 | s = 400 | s = 600 | |
469.7 | 242.7 | 242.7 | 199.3 | 421.7 | 285.5 | 405 | 163.2 | 405 | 122.6 | |
Different scanning strategy | P = 160 W; s = 400 mm/s | P = 160 W; s = 600 mm/s | P = 200 W; s = 600 mm/s | P = 160 W; s = 500 mm/s | ------ | |||||
Striped | Chessboard | Striped | Chessboard | Striped | Chessboard | Striped | Chessboard | |||
469.7 | 405 | 199.3 | 122.6 | 421.7 | 324.4 | 242.7 | 163.2 |
Sample | Power | Scanning Speed | Scanning Strategy | Energy Density (E(t)) | Energy Density (E(a)) | Molten Pool (mm) | Grain Size (mm) | Residual Stress (MPa) |
---|---|---|---|---|---|---|---|---|
1 | 160 W | 400 mm/s | Striped | 56 | 62 | 122 × 60 | 112.9 | 469.7 |
2 | 160 W | 500 mm/s | Striped | 45 | 50 | 112 × 45 | 111.6 | 242.7 |
3 | 160 W | 600 mm/s | Striped | 37 | 40 | 100 × 40 | 58.1 | 199.3 |
4 | 160 W | 400 mm/s | Chessboard | 56 | 56 | 115 × 35 | 113.1 | 405 |
5 | 160 W | 500 mm/s | Chessboard | 45 | 45 | 110 × 32 | 69.9 | 163.2 |
6 | 160 W | 600 mm/s | Chessboard | 37 | 37 | 100 × 38 | 72.1 | 122.6 |
7 | 200 W | 800 mm/s | Striped | 35 | 39 | 145 × 38 | 91.3 | 285.5 |
8 | 200 W | 600 mm/s | Striped | 46 | 51 | 155 × 48 | 118.8 | 421.7 |
9 | 200 W | 600 mm/s | Chessboard | 46 | 46 | 125 × 35 | 91.7 | 324.4 |
A | 240 W | 800 mm/s | Striped | 42 | 48 | 150 × 40 | 115.5 | 444.7 |
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Bian, P.; Wang, C.; Xu, K.; Ye, F.; Zhang, Y.; Li, L. Coupling Analysis on Microstructure and Residual Stress in Selective Laser Melting (SLM) with Varying Key Process Parameters. Materials 2022, 15, 1658. https://doi.org/10.3390/ma15051658
Bian P, Wang C, Xu K, Ye F, Zhang Y, Li L. Coupling Analysis on Microstructure and Residual Stress in Selective Laser Melting (SLM) with Varying Key Process Parameters. Materials. 2022; 15(5):1658. https://doi.org/10.3390/ma15051658
Chicago/Turabian StyleBian, Peiying, Chunchang Wang, Kewei Xu, Fangxia Ye, Yongjian Zhang, and Lei Li. 2022. "Coupling Analysis on Microstructure and Residual Stress in Selective Laser Melting (SLM) with Varying Key Process Parameters" Materials 15, no. 5: 1658. https://doi.org/10.3390/ma15051658