Effect of a ZrO2 Seed Layer on an Hf0.5Zr0.5O2 Ferroelectric Device Fabricated via Plasma Enhanced Atomic Layer Deposition
Abstract
:1. Introduction
2. Materials and Methods
2.1. HZO Ferroelectric Device Fabrication
2.2. Variables
2.3. Evaluation
3. Results
3.1. HZO Thin Film Characteristics
3.2. MFM Device Electrical Characteristics
4. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Song, J.-N.; Oh, M.-J.; Yoon, C.-B. Effect of a ZrO2 Seed Layer on an Hf0.5Zr0.5O2 Ferroelectric Device Fabricated via Plasma Enhanced Atomic Layer Deposition. Materials 2023, 16, 1959. https://doi.org/10.3390/ma16051959
Song J-N, Oh M-J, Yoon C-B. Effect of a ZrO2 Seed Layer on an Hf0.5Zr0.5O2 Ferroelectric Device Fabricated via Plasma Enhanced Atomic Layer Deposition. Materials. 2023; 16(5):1959. https://doi.org/10.3390/ma16051959
Chicago/Turabian StyleSong, Ji-Na, Min-Jung Oh, and Chang-Bun Yoon. 2023. "Effect of a ZrO2 Seed Layer on an Hf0.5Zr0.5O2 Ferroelectric Device Fabricated via Plasma Enhanced Atomic Layer Deposition" Materials 16, no. 5: 1959. https://doi.org/10.3390/ma16051959