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Journal: Materials, 2023
Volume: 16
Number: 3376

Article: Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate
Authors: by You-Chen Weng, Ming-Yao Hsiao, Chun-Hsiung Lin, Yu-Pin Lan and Edward-Yi Chang
Link: https://www.mdpi.com/1996-1944/16/9/3376

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