Armakavicius, N.; Kühne, P.; Papamichail, A.; Zhang, H.; Knight, S.; Persson, A.; Stanishev, V.; Chen, J.-T.; Paskov, P.; Schubert, M.;
et al. Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect. Materials 2024, 17, 3343.
https://doi.org/10.3390/ma17133343
AMA Style
Armakavicius N, Kühne P, Papamichail A, Zhang H, Knight S, Persson A, Stanishev V, Chen J-T, Paskov P, Schubert M,
et al. Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect. Materials. 2024; 17(13):3343.
https://doi.org/10.3390/ma17133343
Chicago/Turabian Style
Armakavicius, Nerijus, Philipp Kühne, Alexis Papamichail, Hengfang Zhang, Sean Knight, Axel Persson, Vallery Stanishev, Jr-Tai Chen, Plamen Paskov, Mathias Schubert,
and et al. 2024. "Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect" Materials 17, no. 13: 3343.
https://doi.org/10.3390/ma17133343
APA Style
Armakavicius, N., Kühne, P., Papamichail, A., Zhang, H., Knight, S., Persson, A., Stanishev, V., Chen, J.-T., Paskov, P., Schubert, M., & Darakchieva, V.
(2024). Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect. Materials, 17(13), 3343.
https://doi.org/10.3390/ma17133343