Hydrostatic Pressure as a Tool for the Study of Semiconductor Properties—An Example of III–V Nitrides
Abstract
:1. Introduction
2. High Pressure Effects in Nitride Compounds and Alloys
2.1. High Pressure in Crystal Growth
2.1.1. AlN
2.1.2. GaN
2.1.3. InN
2.2. Pressure Dependence of the Band Gaps
2.3. Bulk Modulus and Pressure-Induced Phase Transitions
2.4. Pressure Dependence of the Effective Mass
- -
- m* increases with electron concentration and pressure,
- -
- dm*/dp decreases with increasing ne.
2.5. Conduction Band Filling in InN
2.6. Pressure Dependence of Band Gaps in In-Containing Nitride Semiconductors
3. Pressure Studies of Native Defects and Impurities
3.1. Point Defects in Nitrides—Pressure Effects
- A very small pressure coefficient, from −5 meV/GPa to 4 meV/GPa. These are the neutral states of Vcat, CN, Mgcat, Zncat, and s-like of VN, which are degenerate to VBM or are up to 0.5 eV above VBM, and their charged states, which are up to 2 eV above VBM. As expected, under hydrostatic pressure, the states near the edges of the band follow them.
- The pressure coefficients are between 9 and 23 meV/GPa. These are all antisites that produce states near the center of the gap.
- The pressure coefficients are between 12 and 37 meV/GPa. These are the states of VN and Ccat that degenerate to or just below the CBM.
3.2. n-Type Doping—DX Centers in GaN and AlGaN
3.3. n-Type Doping—Resonant Localized Donor State in InN
3.4. p-Type Doping—Magnesium Acceptors
4. High Pressure in Quantum Wells and Superlattices
4.1. Quantum Structures
4.2. GaN/AlN QWs
- (i)
- For thin GaN/AlN QWs (1–4 nm), the experimentally determined dEPL/dp values are in good agreement with theoretical predictions [88,98]. They decrease from +24 meV/GPa (1 nm QWs) to −22 meV/GPa (4 nm QWs) because of the increase in the internal electric field with pressure according to Equation (2). This confirms the correctness of the theoretical model in the description of the electronic properties of the polar QWs.
- (ii)
- For thick GaN/AlN QWs (6 nm), the measured dEPL/dp = −3 meV/GPa differs significantly from the theoretical value of ~−60 meV/GPa. This is likely an indication of emission from a deep defect state, which is more efficient than QW PL.
4.3. GaN/AlGaN QWs
4.4. GaN/AlInN QWs
4.5. InGaN/GaN QWs
4.6. In(Ga)N/GaN SLs
5. Devices and Perspectives
5.1. Devices
5.2. Perspectives
6. Summary
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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InN | GaN | AlN | |
---|---|---|---|
Eg (eV) | 0.7–0.8 a, 0.76 b, 0.61 c | 3.47 d | 6.04 e |
dEg/dp (meV/GPa) | 27.4 f, 29 ± 1 g | 41.4 h | 49 e |
Lattice constant, aeff (Å) | 4.98 | 4.50 | 4.37 |
Ionicity Ref. [34] | 0.859 | 0.770 | 0.775 |
Ionicity Ref. [35] | 0.578 | 0.500 | 0.449 |
Ionicity Ref. [36] | 0.853 | 0.778 | 0.794 |
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Gorczyca, I.; Suski, T.; Perlin, P.; Grzegory, I.; Kaminska, A.; Staszczak, G. Hydrostatic Pressure as a Tool for the Study of Semiconductor Properties—An Example of III–V Nitrides. Materials 2024, 17, 4022. https://doi.org/10.3390/ma17164022
Gorczyca I, Suski T, Perlin P, Grzegory I, Kaminska A, Staszczak G. Hydrostatic Pressure as a Tool for the Study of Semiconductor Properties—An Example of III–V Nitrides. Materials. 2024; 17(16):4022. https://doi.org/10.3390/ma17164022
Chicago/Turabian StyleGorczyca, Iza, Tadek Suski, Piotr Perlin, Izabella Grzegory, Agata Kaminska, and Grzegorz Staszczak. 2024. "Hydrostatic Pressure as a Tool for the Study of Semiconductor Properties—An Example of III–V Nitrides" Materials 17, no. 16: 4022. https://doi.org/10.3390/ma17164022