Chen, L.; Liu, C.; Lee, H.K.; Varghese, B.; Ip, R.W.F.; Li, M.; Quek, Z.J.; Hong, Y.; Wang, W.; Song, W.;
et al. Demonstration of 10 nm Ferroelectric Al0.7Sc0.3N-Based Capacitors for Enabling Selector-Free Memory Array. Materials 2024, 17, 627.
https://doi.org/10.3390/ma17030627
AMA Style
Chen L, Liu C, Lee HK, Varghese B, Ip RWF, Li M, Quek ZJ, Hong Y, Wang W, Song W,
et al. Demonstration of 10 nm Ferroelectric Al0.7Sc0.3N-Based Capacitors for Enabling Selector-Free Memory Array. Materials. 2024; 17(3):627.
https://doi.org/10.3390/ma17030627
Chicago/Turabian Style
Chen, Li, Chen Liu, Hock Koon Lee, Binni Varghese, Ronald Wing Fai Ip, Minghua Li, Zhan Jiang Quek, Yan Hong, Weijie Wang, Wendong Song,
and et al. 2024. "Demonstration of 10 nm Ferroelectric Al0.7Sc0.3N-Based Capacitors for Enabling Selector-Free Memory Array" Materials 17, no. 3: 627.
https://doi.org/10.3390/ma17030627
APA Style
Chen, L., Liu, C., Lee, H. K., Varghese, B., Ip, R. W. F., Li, M., Quek, Z. J., Hong, Y., Wang, W., Song, W., Lin, H., & Zhu, Y.
(2024). Demonstration of 10 nm Ferroelectric Al0.7Sc0.3N-Based Capacitors for Enabling Selector-Free Memory Array. Materials, 17(3), 627.
https://doi.org/10.3390/ma17030627
