Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs
Abstract
:1. Introduction
2. Materials and Methods
2.1. Devices under Test (DUTs)
2.2. Experimental Methods
2.2.1. Liang and Hu’s Electron Trapping Model
2.2.2. Extraction of Charge-to-Breakdown ()
3. Results
3.1. Modeling of When Breakdown Occurs () in Commercial SiC DUTs
3.1.1. Extraction
3.1.2. Mathematical Expression of
3.2. Modeling of in Commercial SiC DUTs
3.3. Extraction of in Commercial SiC DUTs under CVS and PVS
4. Discussion
5. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
- Choi, H. Overview of Silicon Carbide Power Devices; Fairchild Semiconductor: Sunnyvale, CA, USA, 2016. [Google Scholar]
- FastSiC. SiC Is Replacing Si in Electric Vehicles. Available online: https://fastsic.com/2020/06/24/sic-is-replacing-si-in-electric-vehicles/ (accessed on 1 June 2020).
- Emilio, M. SiC enabling EV applications. Available online: https://www.powerelectronicsnews.com/sic-enabling-ev-applications/ (accessed on 12 April 2019).
- Russell, S.; Gammon, P. ROHM Gen 4: A Technical Review. Available online: https://www.techinsights.com/blog/rohm-gen-4-technical-review (accessed on 2 August 2022).
- Telford, M. SiC Making Further Inroads into Silicon for EV Powertrains. SemiconductorTODAY 2023, 18. Available online: https://www.semiconductor-today.com/news_items/backissues/semiconductor-today-april-2023.pdf (accessed on 17 April 2023).
- Li, H.F.; Dimitrijev, S.; Harrison, H.B.; Sweatman, D. Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing. Appl. Phys. Lett. 1997, 70, 2028–2030. [Google Scholar] [CrossRef]
- Li, H.; Dimitrijev, S.; Harrison, H.B. Improved reliability of NO-nitrided SiO2 grown on p-type 4H-SiC. IEEE Electron Device Lett. 1998, 19, 279–281. [Google Scholar]
- Fukuda, K.; Suzuki, S.; Tanaka, T.; Arai, K. Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing. Appl. Phys. Lett. 2000, 76, 1585–1587. [Google Scholar] [CrossRef]
- Chung, G.Y.; Tin, C.C.; Williams, J.R.; McDonald, K.; Di Ventra, M.; Pantelides, S.T.; Feldman, L.C.; Weller, R.A. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide. Appl. Phys. Lett. 2000, 76, 1713–1715. [Google Scholar] [CrossRef]
- Itoh, H.; Enokizono, T.; Miyase, T.; Hori, T.; Wada, K.; Furumai, M. High-Quality SiC Epitaxial Wafer “EpiEra” Realizing High-Reliability Large-Current Power Devices. Sumitomo Electr. 2020, 91, 47–50. [Google Scholar]
- Zhao, Z.; Li, Y.; Xia, X.; Wang, Y.; Zhou, P.; Li, Z. Growth of high-quality 4H-SiC epitaxial layers on 4° off-axis C-face 4H-SiC substrates. J. Cryst. Growth 2020, 531, 125355. [Google Scholar] [CrossRef]
- Kim, J.; Kim, K. 4H-SiC Double-Trench MOSFET with Side Wall Heterojunction Diode for Enhanced Reverse Recovery Performance. Energies 2020, 13, 4602. [Google Scholar] [CrossRef]
- Chaturvedi, M.; Dimitrijev, S.; Haasmann, D.; Moghadam, H.A.; Pande, P.; Jadli, U. Comparison of Commercial Planar and Trench SiC MOSFETs by Electrical Characterization of Performance-Degrading Near-Interface Traps. IEEE Trans. Electron Devices 2022, 69, 6225–6230. [Google Scholar] [CrossRef]
- Seok, O.; Kang, I.; Moon, J.; Kim, H.; Ha, M.; Bahng, W. Double p-base structure for 1.2-kV SiC trench MOSFETs with the suppression of electric-field crowding at gate oxide. Microelectron. Eng. 2020, 225, 111280. [Google Scholar] [CrossRef]
- Park, Y.; Yoon, H.; Kim, C.; Kim, G.; Kang, G.; Seok, O.; Ha, M. Design and Optimization of 1.2 kV SiC Trench MOSFETs Using a Tilted Ion Implantation Process for High Breakdown Voltage. Jpn. J. Appl. Phys. 2023, 62, 011001. [Google Scholar] [CrossRef]
- Stahlbush, R.; Mahakik, K.; Lelis, A.; Green, R. Effects of Basal Plane Dislocations on SiC Power Device Reliability. In Proceedings of the 2018 IEEE 64th International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 1–5 December 2018. [Google Scholar]
- Qian, J.; Shi, L.; Jin, M.; Bhattacharya, M.; Shimbori, A.; Yu, H.; Houshmand, S.; White, M.H.; Agarwal, A.K. An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench Structures. Micromachines 2024, 15, 177. [Google Scholar] [CrossRef] [PubMed]
- Roccaforte, F.; Greco, G.; Fiorenza, P. Processing Issues in SiC and GaN Power Devices Technology: The Cases of 4H-SiC Planar MOSFET and Recessed Hybrid GaN MISHEMT. In Proceedings of the 2018 International Semiconductor Conference (CAS), Sinaia, Romania, 10–12 October 2018. [Google Scholar]
- Yao, J. Working principle and characteristic analysis of SiC MOSFET. J. Phys. Conf. Ser. 2023, 2435, 012022. [Google Scholar] [CrossRef]
- Keukeleire, C. Silicon Carbide (SiC)—From Challenging Material to Robust Reliability. Available online: https://www.onsemi.com/pub/collateral/tnd6396-d.pdf (accessed on 10 December 2022).
- Ni, Z.; Lyu, X.; Yadav, O.; Singh, B.; Zheng, S.; Cao, D. Overview of Real-Time Lifetime Prediction and Extension for SiC Power Converters. IEEE Trans. Power Electron. 2020, 35, 7765–7794. [Google Scholar] [CrossRef]
- Ikpe, S.; Lauenstein, J.; Carr, G.; Hunter, D.; Ludwig, L.; Wood, W.; Castillo, L.; Fitzpatrick, F.; Chen, Y. Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments. Addit. Pap. Present. 2016, 2016, 184–189. [Google Scholar] [CrossRef]
- Liu, T.; Zhu, S.; White, M.H.; Salemi, A.; Sheridan, D.; Agarwal, A.K. Time-Dependent Dielectric Breakdown of Commercial 1.2 kV 4H-SiC Power MOSFETs. J. Electron Devices Soc. 2021, 9, 633–639. [Google Scholar] [CrossRef]
- McPherson, J.W.; Mogul, H.C. Underlying Physics of the Thermochemical E Model in Describing Low-field Time-dependent Dielectric Breakdown in SiO2 Thin Films. J. Appl. Phys. 1998, 84, 1513–1523. [Google Scholar] [CrossRef]
- Liu, T. Gate Oxide Reliability of 4H-SiC MOSFETs. Level of Thesis, The Ohio State University, Columbus, OH, USA, 11 April 2022. [Google Scholar]
- Ghetti, A. Gate Oxide Reliability: Physical and Computational Models. Available online: https://link.springer.com/chapter/10.1007/978-3-662-09432-7_6 (accessed on 8 May 2004).
- Moens, P.; Franchi, J.; Lettens, J.; Schepper, L.D.; Domeij, M.; Allerstam, F. A Charge-to-Breakdown (QBD) Approach to SiC Gate Oxide Lifetime Extraction and Modeling. In Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 13–18 September 2020. [Google Scholar]
- Tan, W.; Zhao, L.; Lu, C.; Nie, W.; Gu, X. An In-depth Investigation of Gate Leakage Current Degradation Mechanisms in 1.2kV 4H-SiC Power MOSFETs. Microelectron. Reliab. 2023, 142, 114907. [Google Scholar] [CrossRef]
- Liang, M.; Hu, C. Electron trapping in very thin thermal silicon dioxides. In Proceedings of the 1981 International Electron Devices Meeting (IEDM), Washington, DC, USA, 7–9 December 1981. [Google Scholar]
- Wang, H.; Jiang, D. Design of High Temperature Gate Driver for SiC MOSFET for EV Motor Drives. In Proceedings of the 2017 IEEE Transportation Electrification Conference and Expo, Asia-Pacific (ITEC Asia-Pacific), Harbin, China, 7–10 August 2017. [Google Scholar]
- Zhu, S.; Liu, T.; Shi, L.; Jin, M.; Maddi, H.; White, M.H.; Agarwal, A.K. Comparison of Gate Oxide Lifetime Predictions with Charge-to-Breakdown Approach and Constant-Voltage TDDB on SiC Power MOSFET. In Proceedings of the 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Redondo Beach, CA, USA, 7–11 November 2021. [Google Scholar]
- Shi, L.; Zhu, S.; Qian, J.; Jin, M.; Bhattacharya, M.; Shimbori, A.; Liu, T.; White, M.H.; Agarwal, A.K. Investigation of different screening methods on threshold voltage and gate oxide lifetime of SiC Power MOSFETs. In Proceedings of the 2023 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 26–30 March 2023. [Google Scholar]
- Sarnago, H.; Lucía, Ó.; Jiménez, R.; Gaona, P. Differential-Power-Processing On-Board-Charger for 400/800-V Battery Architectures using 650-V Super Junction MOSFETs. In Proceedings of the 2021 IEEE Applied Power Electronics Conference and Exposition (APEC), Phoenix, AZ, USA, 14–17 June 2021. [Google Scholar]
- Kegley, L. Exploring On-Board EV Systems from 400 V to 800 V. Available online: https://www.powerelectronicsnews.com/exploring-on-board-ev-systems-from-400-v-to-800-v/ (accessed on 17 April 2023).
- Jung, C. Power Up with 800-V Systems: The benefits of upgrading voltage power for battery-electric passenger vehicles. IEEE Electrif. Mag. 2017, 5, 53–58. [Google Scholar] [CrossRef]
- Hussey, A. Lucid Air to be the Fastest Charging EV, Featuring a 900V+ Architecture Delivering a Charging Rate of Up to 20 Miles Per Minute. Available online: https://lucidmotors.com/media-room/lucid-air-fastest-charging-ev (accessed on 19 August 2020).
- Goldberg, L. Exploiting SiC MOSFETs to Power EV Innovation. Available online: https://www.electronicdesign.com/markets/automotive/article/21262547/electronic-design-exploiting-sic-mosfets-to-power-ev-innovation (accessed on 23 March 2023).
- Shi, L.; Qian, J.; Jin, M.; Bhattacharya, M.; Yu, H.; White, M.H.; Agarwal, A.K.; Shimbori, A.; Xu, Z. An Effective Screening Technique for Early Oxide Failure in SiC Power MOSFETs. In Proceedings of the 2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA), Charlotte, NC, USA, 4–6 December 2023. [Google Scholar]
- Koga, Y.; Kurita, K. Fabrication of Silicon on Insulator Wafer with Silicon Carbide Insulator Layer by Surface-activated Bonding at Room Temperature. Jpn. J. Appl. Phys. 2020, 59, 051002. [Google Scholar] [CrossRef]
- Pu, S. Reliability Assessment, Condition Monitoring and Lifetime Estimation of Silicon Carbide MOSFETs. Ph.D. Thesis, The University of Texas at Dallas, Dallas, TX, USA, 20 July 2021. [Google Scholar]
Vendor | Voltage Rating (V) | Current Rating (A) | Structure | Est. Oxide Thickness (nm) | Est. Oxide Area (mm2) |
---|---|---|---|---|---|
E | 1200 | 11 | Planar | 44.15 | 0.9 |
Disclaimer/Publisher’s Note: The statements, opinions and data contained in all publications are solely those of the individual author(s) and contributor(s) and not of MDPI and/or the editor(s). MDPI and/or the editor(s) disclaim responsibility for any injury to people or property resulting from any ideas, methods, instructions or products referred to in the content. |
© 2024 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
Share and Cite
Qian, J.; Shi, L.; Jin, M.; Bhattacharya, M.; Shimbori, A.; Yu, H.; Houshmand, S.; White, M.H.; Agarwal, A.K. Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs. Materials 2024, 17, 1455. https://doi.org/10.3390/ma17071455
Qian J, Shi L, Jin M, Bhattacharya M, Shimbori A, Yu H, Houshmand S, White MH, Agarwal AK. Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs. Materials. 2024; 17(7):1455. https://doi.org/10.3390/ma17071455
Chicago/Turabian StyleQian, Jiashu, Limeng Shi, Michael Jin, Monikuntala Bhattacharya, Atsushi Shimbori, Hengyu Yu, Shiva Houshmand, Marvin H. White, and Anant K. Agarwal. 2024. "Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs" Materials 17, no. 7: 1455. https://doi.org/10.3390/ma17071455