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Journal: Materials, 2012
Volume: 5
Number: 404

Article: Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance
Authors: by Wipakorn Jevasuwan, Yuji Urabe, Tatsuro Maeda, Noriyuki Miyata, Tetsuji Yasuda, Hisashi Yamada, Masahiko Hata, Noriyuki Taoka, Mitsuru Takenaka and Shinichi Takagi
Link: https://www.mdpi.com/1996-1944/5/3/404

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