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Article

Raman Microscopic Analysis of Internal Stress in Boron-Doped Diamond

by
Kevin E. Bennet
1,2,
Kendall H. Lee
2,
Jonathan R. Tomshine
2,
Emma M. Sundin
3,
James N. Kruchowski
1,
William G. Durrer
3,
Bianca M. Manciu
3,
Abbas Kouzani
4 and
Felicia S. Manciu
3,*
1
Division of Engineering, Mayo Clinic, Rochester, MN 55905, USA
2
Department of Neurologic Surgery, Mayo Clinic, Rochester, MN 55905, USA
3
Department of Physics, University of Texas at El Paso, El Paso, TX 79968, USA
4
School of Engineering, Deakin University, Waurn Ponds, Victoria 3216, Australia
*
Author to whom correspondence should be addressed.
Materials 2015, 8(5), 2782-2793; https://doi.org/10.3390/ma8052782
Submission received: 1 April 2015 / Accepted: 18 May 2015 / Published: 22 May 2015
(This article belongs to the Section Advanced Materials Characterization)
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Abstract

Analysis of the induced stress on undoped and boron-doped diamond (BDD) thin films by confocal Raman microscopy is performed in this study to investigate its correlation with sample chemical composition and the substrate used during fabrication. Knowledge of this nature is very important to the issue of long-term stability of BDD coated neurosurgical electrodes that will be used in fast-scan cyclic voltammetry, as potential occurrence of film delaminations and dislocations during their surgical implantation can have unwanted consequences for the reliability of BDD-based biosensing electrodes. To achieve a more uniform deposition of the films on cylindrically-shaped tungsten rods, substrate rotation was employed in a custom-built chemical vapor deposition reactor. In addition to visibly preferential boron incorporation into the diamond lattice and columnar growth, the results also reveal a direct correlation between regions of pure diamond and enhanced stress. Definite stress release throughout entire film thicknesses was found in the current Raman mapping images for higher amounts of boron addition. There is also a possible contribution to the high values of compressive stress from sp2 type carbon impurities, besides that of the expected lattice mismatch between film and substrate.
Keywords: confocal Raman mapping; induced stress; boron-doped diamond confocal Raman mapping; induced stress; boron-doped diamond
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MDPI and ACS Style

Bennet, K.E.; Lee, K.H.; Tomshine, J.R.; Sundin, E.M.; Kruchowski, J.N.; Durrer, W.G.; Manciu, B.M.; Kouzani, A.; Manciu, F.S. Raman Microscopic Analysis of Internal Stress in Boron-Doped Diamond. Materials 2015, 8, 2782-2793. https://doi.org/10.3390/ma8052782

AMA Style

Bennet KE, Lee KH, Tomshine JR, Sundin EM, Kruchowski JN, Durrer WG, Manciu BM, Kouzani A, Manciu FS. Raman Microscopic Analysis of Internal Stress in Boron-Doped Diamond. Materials. 2015; 8(5):2782-2793. https://doi.org/10.3390/ma8052782

Chicago/Turabian Style

Bennet, Kevin E., Kendall H. Lee, Jonathan R. Tomshine, Emma M. Sundin, James N. Kruchowski, William G. Durrer, Bianca M. Manciu, Abbas Kouzani, and Felicia S. Manciu. 2015. "Raman Microscopic Analysis of Internal Stress in Boron-Doped Diamond" Materials 8, no. 5: 2782-2793. https://doi.org/10.3390/ma8052782

APA Style

Bennet, K. E., Lee, K. H., Tomshine, J. R., Sundin, E. M., Kruchowski, J. N., Durrer, W. G., Manciu, B. M., Kouzani, A., & Manciu, F. S. (2015). Raman Microscopic Analysis of Internal Stress in Boron-Doped Diamond. Materials, 8(5), 2782-2793. https://doi.org/10.3390/ma8052782

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