Jood, P. and Ohta, M. Hierarchical Architecturing for Layered Thermoelectric Sulfides and Chalcogenides. Materials 2015, 8, 1124–1149

The authors wish to make the following corrections to this paper [1].

The authors regret that the lattice thermal conductivity (κ_at) values of some samples in Table 1 and thermoelectric figure of merit (ZT) values of some samples in Table 2 were not correct. The tables with correct κ_lat and ZT values are shown below. The authors would like to apologize for any inconvenience caused.

Table 1. Seebeck coefficient (S), electrical resistivity (ρ), carrier mobility (μ), power factor (S²/ρ), lattice thermal conductivity (κ_lat), and thermoelectric figure of merit (ZT) at room temperature in the in-plane (ab-plane) and out-of-plane (c-axis) directions for a single crystal of nearly stoichiometric TiS₂ [2] and polycrystalline Ti_1.008S₂ [3].

Sample	Direction	S (μV·K−1)	ρ (μΩ m)	μ (cm2·V−1·s−1)	S2/ρ (μW·K−2·m−1)	κlat (W·K−1·m−1)	ZT
Single crystal	In-plane	−251	17	15	3710	6.35	0.16
Single crystal	Out-of-plane	-	13,000	0.017	-	4.21	-
Polycrystalline	In-plane	−80	6.2	2.3	1030	2.0	0.12
Polycrystalline	Out-of-plane	−84	11	1.2	630	1.8	0.10

Table 1. Seebeck coefficient (S), electrical resistivity (ρ), carrier mobility (μ), power factor (S²/ρ), lattice thermal conductivity (κ_lat), and thermoelectric figure of merit (ZT) at room temperature in the in-plane (ab-plane) and out-of-plane (c-axis) directions for a single crystal of nearly stoichiometric TiS₂ [2] and polycrystalline Ti_1.008S₂ [3].

Sample	Direction	S (μV·K−1)	ρ (μΩ m)	μ (cm2·V−1·s−1)	S2/ρ (μW·K−2·m−1)	κlat (W·K−1·m−1)	ZT
Single crystal	In-plane	−251	17	15	3710	6.35	0.16
Single crystal	Out-of-plane	-	13,000	0.017	-	4.21	-
Polycrystalline	In-plane	−80	6.2	2.3	1030	2.0	0.12
Polycrystalline	Out-of-plane	−84	11	1.2	630	1.8	0.10

Table 2. Seebeck coefficient (S), electrical resistivity (ρ), total thermal conductivity (κ_total), lattice thermal conductivity (κ_lat), power factor (S²/ρ), and thermoelectric figure of merit (ZT) in the in-plane (ab-plane) and out-of-plane (c-axis) directions of state-of-the-art misfit layered sulfides: [MS]_1+mTS₂ (M = La, Yb; T = Cr, Nb) [4,5].

Sample	Direction	T (K)	ρ (μΩ·m)	S (μV·K−1)	κtotal (W·K−1·m−1)	κlat(W·K−1·m−1)	S2/ρ (μW·K−2·m−1)	ZT	Reference
(Yb2S2)0.62NbS2	In-plane	300	19.0	60	0.80	0.41	200	0.1	[5]
(La2S2)0.62NbS2	In-plane	300	11.5	22	-	-	50	-	[5]
(LaS)1.14NbS2a	In-plane	300	7.6	37	2.5	1.50	177	0.02	[4]
		950	22.0	83	2.00	0.93	316	0.15
	Out-of-plane	300	13.3	25	2.04	1.48	49	0.01
		950	32.1	72	1.62	0.88	162	0.09
(LaS)1.14NbS2b	In-plane	300	5.2	35	4.88	3.45	233	0.02	[4]
		950	16.9	83	3.25	1.86	405	0.12
	Out-of-plane	300	9.3	25	1.56	0.75	70	0.01
		950	28.5	56	1.34	0.52	111	0.08
(LaS)1.2CrS2a	In-plane	950	207	−172	1.16	1.04	143	0.11	[4]
	Out-of-plane	950	223	−174	1.02	0.91	137	0.13
(LaS)1.2CrS2b	In-plane	950	171	−172	1.25	1.11	174	0.14	[4]
	Out-of-plane	950	278	−154	0.92	0.84	84	0.08

^a Small grains (~1 μm), weak/random orientation of grains; ^b Large grains (>20 μm), strong orientation of grains perpendicular to the pressing direction.

Table 2. Seebeck coefficient (S), electrical resistivity (ρ), total thermal conductivity (κ_total), lattice thermal conductivity (κ_lat), power factor (S²/ρ), and thermoelectric figure of merit (ZT) in the in-plane (ab-plane) and out-of-plane (c-axis) directions of state-of-the-art misfit layered sulfides: [MS]_1+mTS₂ (M = La, Yb; T = Cr, Nb) [4,5].

Sample	Direction	T (K)	ρ (μΩ·m)	S (μV·K−1)	κtotal (W·K−1·m−1)	κlat(W·K−1·m−1)	S2/ρ (μW·K−2·m−1)	ZT	Reference
(Yb2S2)0.62NbS2	In-plane	300	19.0	60	0.80	0.41	200	0.1	[5]
(La2S2)0.62NbS2	In-plane	300	11.5	22	-	-	50	-	[5]
(LaS)1.14NbS2a	In-plane	300	7.6	37	2.5	1.50	177	0.02	[4]
		950	22.0	83	2.00	0.93	316	0.15
	Out-of-plane	300	13.3	25	2.04	1.48	49	0.01
		950	32.1	72	1.62	0.88	162	0.09
(LaS)1.14NbS2b	In-plane	300	5.2	35	4.88	3.45	233	0.02	[4]
		950	16.9	83	3.25	1.86	405	0.12
	Out-of-plane	300	9.3	25	1.56	0.75	70	0.01
		950	28.5	56	1.34	0.52	111	0.08
(LaS)1.2CrS2a	In-plane	950	207	−172	1.16	1.04	143	0.11	[4]
	Out-of-plane	950	223	−174	1.02	0.91	137	0.13
(LaS)1.2CrS2b	In-plane	950	171	−172	1.25	1.11	174	0.14	[4]
	Out-of-plane	950	278	−154	0.92	0.84	84	0.08

^a Small grains (~1 μm), weak/random orientation of grains; ^b Large grains (>20 μm), strong orientation of grains perpendicular to the pressing direction.