2.1. PN Method
The PN junction (P-type and N-type semiconductor junction) forward voltage method is currently the mainstream approach for measuring LED junction temperature due to its simplicity, low cost, and direct correlation with semiconductor temperature characteristics. This method utilizes the approximately linear relationship between the PN junction forward voltage drop and the junction temperature, making it an effective technique for real-time LED temperature monitoring [
5]. The relationship between the PN junction forward voltage V and temperature T can be expressed as [
6]:
where
represents the bandgap voltage of the semiconductor material (for silicon at 0 K,
≈ 1.17 V), k = 1.38 × 10
−23 J/K is the Boltzmann constant, q = 1.6 × 10
−19 C denotes the elementary charge, T is the absolute temperature of the PN junction (in Kelvin), I is the measured current flowing through the junction (typically ranging from 10 μA to 10 mA), and I
s is the reverse saturation current, which is determined by the doping concentration, junction area, and temperature (for silicon devices at 300 K, Is ≈ 10
−14 A).
This formula indicates that Vf decreases approximately linearly with increasing T, with a theoretical temperature coefficient of about −2 mV/°C. However, in practical measurements, the junction temperature shift induced by Joule heating must be considered, which is primarily governed by I2Rs (where Rs is the series resistance). Additionally, a key challenge of the PN junction forward voltage temperature measurement method is that it requires measurement at low currents. When an LED operates at a constant power output for brightness control, an intermittent low-current measurement must be inserted to determine the temperature, which consequently reduces the overall brightness of the LED.
2.2. Model Development
To improve the accuracy of temperature prediction, this study proposes a novel temperature prediction model, the Temperature-Power Prediction Model (TP Model), for quantitatively analyzing the relationship between heat generation and power consumption in electronic components. For most electronic components, heat generation typically increases linearly with current and voltage, indicating a positive correlation with power. By evaluating the effect of power—calculated through ADC (Analog-to-digital converter) and PWM (Pulse Width Modulation)—on heat generation, this study investigates the influence of power on LED temperature and further explores its role in driving LED temperature variations.
A separated thermal model is developed to analyze the impact of self-heating on temperature in electronic components while independently assessing the thermal contribution of PCB (Printed Circuit Board) heat dissipation. The relationship between self-heating power, input power, and output power of electronic components can be accurately described by the following mathematical expression [
7]:
where
represents the self-heating power,
is the input power of the heat source, and
is the output power. The expression for
is given by [
8]:
where
represents the mechanical efficiency. Thus, the self-heating power
of the electronic component can be rewritten as:
According to Fourier’s law of heat conduction:
where
is the thermal conductivity, which is material-dependent and obtained experimentally,
is the cross-sectional area of heat conduction, and
is the length or thickness of the thermal conduction path.
represents the temperature difference caused by heat conduction between all electronic components on the PCB and the target electronic component. The expression is given by [
8]:
where
is the PCB temperature and
is the electronic component temperature.
According to the second law of thermodynamics, heat always transfers from the higher-temperature region to the lower-temperature region. A constant current source generates power dissipation while supplying a stable current, with the resulting heat concentrated inside the chip, making it the primary heat source. However, the self-heating effect may interfere with the accurate measurement of thermal conduction parameters. Therefore, this study proposes an improved method that isolates the electronic component from the PCB, connecting them via conducting wires and measuring the solder pad temperature. This effectively separates the self-heating effect. Based on this method, the corrected expression for the thermal conduction temperature difference is given by:
where
represents the temperature difference between the built-in constant current source chip and the electronic component,
is the chip junction temperature, and
is the solder pad temperature of the electronic component.
Under steady-state conditions, the system follows the principle of energy conservation. For a heat-generating source, the total generated thermal power
must equal the total dissipated thermal power. In an ideal scenario where no other heat dissipation paths exist, all heat is dissipated through thermal conduction. Therefore, the self-heating power of the PCB is equivalent to the heat power lost through thermal conduction, given by [
9]:
From Equations (4)–(6), it follows that [
9]:
Since
,
,
, and
are constants, let the self-heating proportional coefficient be defined as
, then:
The thermal resistance formula is an essential theoretical tool in electronic engineering and thermal management. It is widely used to analyze and predict temperature variations in electronic devices, chips, and systems caused by power dissipation during operation. It provides a critical quantitative basis for studying heat transfer paths and optimizing thermal design [
9].
where
represents the self-heating temperature difference,
is the thermal resistance, and
is the self-power dissipation of the electronic component. Based on Equation (17), it can be rewritten as:
where
represents the mechanical efficiency of the electronic component. Since
and
are constants, let the thermal conduction coefficient be defined as
, then:
Based on Equations (10) and (13), the relationship between the corrected heat generation
and power
can be expressed as:
Since mixed-light LEDs require switching between different colors and brightness levels, their temperature is affected by power variations, leading to changes in self-heating power. The relationship between the self-heating temperature rise of the LED and the input power can be expressed as:
where
represents the self-heating temperature rise,
is the self-heating coefficient of the LED, and
is the input power of the LED. The relationship can be expressed as:
where
represents the LED voltage, which can be obtained through ADC, and
is the current. Since mixed-light LEDs typically consist of three RGB LEDs, the expression can be written as:
where
,
, and
represent the currents of the red, green, and blue LEDs, respectively. Their corresponding calculation formulas are as follows [
10]:
where the value of
is r, g, or b,
is the peak current of the built-in constant current source of the chip.
Since mixed-light LEDs are relatively low-cost, the chip typically contains a built-in constant current source. During the process of supplying a stable current, power dissipation occurs, primarily in the form of heat generated inside the chip. As a result, the heat source is concentrated within the chip itself. To eliminate the impact of self-heating on the measurement of thermal conduction parameters, a new measurement method is proposed, where the electronic component is isolated from the PCB and connected via conductive wires, allowing the solder pad temperature to be measured.
where
represents the temperature difference between the chip junction and the LED solder pad,
is the thermal conduction coefficient of the chip, and
is the input power of the MCU (Microcontroller Unit). The expression can be written as:
where
represents the input voltage of the MCU, and
is the input current of the chip. Since they are connected in series, it follows that
. The expression for
can be written as:
where
represents the power supply voltage.
Thus, the temperature of the LED is given by: