Investigation of 1200 V SiC MOSFETs’ Surge Reliability
Abstract
:1. Introduction
2. Materials and Methods
2.1. The Reverse Conduction Characteristics of SiC Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)
2.2. Setup of the Surge Current Tests
3. Results
4. Discussion
4.1. Analysis of Test Result
4.1.1. Comparison of Devices’ Characteristics before and after the Surge Reliability Tests
4.1.2. Static Characteristic Variation of the Tested Device
4.2. Analysis of Failure Mechanism
4.2.1. Aluminum Melted and Diffused into the Interlayer Dielectric
4.2.2. Ohmic Contact Layer Disappeared
4.2.3. Al Penetrated into SiC
4.3. Analysis of Simulation Result
4.3.1. Simulation Setting
4.3.2. Surge Simulation Results and Analysis
The Channel Non-Conducting Mode
The Channel Conduction Mode
5. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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Region | Numerical Value | Unit |
---|---|---|
Doping concentration in P−well region | Surface , internal peak 1 | cm−3 |
Depth of P−well region | 0.5 | |
Doping concentration in N− drift region | cm−3 | |
Depth of N- drift region | 10 | |
Doping concentration in N++ substrate region | cm−3 | |
Depth of N++ substrate region | 170 | |
Doping concentration in N+ region | cm−3 | |
Depth of N+ region | 0.2 | |
Doping concentration in P+ region | cm−3 | |
Length of channel | 0.96 | |
Thickness of gate oxide layer | 0.05 | |
Length of junction field-effect transistor (JFET) region | 2.4 |
Vds (V) | Rds(on) (mΩ) | Ids (A)/ Body Diode IF (A) | Vgs (V) | Vth (V) | |
---|---|---|---|---|---|
SCT10N120 | 1200 | 500 | 12/12 | −10/25 | 5.5 |
C2M0080120D | 1200 | 80 | 36/36 | −5/20 | 2.8 |
C2M0160120D | 1200 | 160 | 19/19 | −5/20 | 3 |
LSIC1MO120E0160 | 1200 | 160 | 22/22 | −5/20 | 3.6 |
SCT3160KLGC11 | 1200 | 160 | 17/17 | −4/22 | 5 |
Ids (A)/ Body Diode IF (A) | Rds(on) (mΩ) | Maximum Surge Current (A) | Maximum Surge Current/Rated Current | |
---|---|---|---|---|
SCT10N120 | 12/12 | 500 | 61 | 5 |
C2M0080120D | 36/36 | 80 | 155 | 4.3 |
C2M0160120D | 19/19 | 160 | 105 | 5.5 |
LSIC1MO120E0160 | 22/22 | 160 | 95 | 4.3 |
SCT3160KLGC11 | 17/17 | 160 | 42 | 2.5 |
Device | Rgs (Ω) | Rds (Ω) |
---|---|---|
Before the tests | >100 M | >100 M |
SCT10N120, after tests | 0.4 | 14 k |
C2M0160120D, after tests | 0.08 | >100 M |
Model | Model Used in Simulation | Notes |
---|---|---|
Carrier Statistics Models | Fermi-Dirac | Reduced carrier concentrations in heavily doped regions (statistical approach). |
Bandgap Narrowing(BGN) | Important in heavily doped regions. Critical for bipolar gain. Use Klaassen Model. | |
Mobility Models | Lombardi (CVT) Model | Complete model including N, T, E//, and E┴ effects. * |
Recombination Models | Shockley-Read-Hall(SRH) | Uses fixed minority carrier lifetimes. |
Auger | Direct transition of three carriers. Important at high current densities. | |
Impact Ionization Model | Selberherr’s Model (Impact selb) | Recommended for most cases. Includes temperature dependent parameters. |
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Li, H.; Wang, J.; Ren, N.; Xu, H.; Sheng, K. Investigation of 1200 V SiC MOSFETs’ Surge Reliability. Micromachines 2019, 10, 485. https://doi.org/10.3390/mi10070485
Li H, Wang J, Ren N, Xu H, Sheng K. Investigation of 1200 V SiC MOSFETs’ Surge Reliability. Micromachines. 2019; 10(7):485. https://doi.org/10.3390/mi10070485
Chicago/Turabian StyleLi, Huan, Jue Wang, Na Ren, Hongyi Xu, and Kuang Sheng. 2019. "Investigation of 1200 V SiC MOSFETs’ Surge Reliability" Micromachines 10, no. 7: 485. https://doi.org/10.3390/mi10070485