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Journal: Micromachines, 2021
Volume: 12
Number: 502
502
Article: Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS)
Authors: by Guilherme Sombrio, Emerson Oliveira, Johannes Strassner, Johannes Richter, Christoph Doering and Henning Fouckhardt
Link: https://www.mdpi.com/2072-666X/12/5/502

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