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Journal: Micromachines, 2021
Volume: 12
Number: 1035
Article:
An Improved P-Type Doped Barrier Surface AlGaN/GaN High Electron Mobility Transistor with High Power-Added Efficiency
Authors:
by
Hujun Jia, Xiaowei Wang, Mengyu Dong, Shunwei Zhu and Yintang Yang
Link:
https://www.mdpi.com/2072-666X/12/9/1035
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