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Journal: Micromachines, 2022
Volume: 13
Number: 1741
Article:
TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode
Authors:
by
Ruoyu Wang, Jingwei Guo, Chang Liu, Hao Wu, Zhiyong Huang and Shengdong Hu
Link:
https://www.mdpi.com/2072-666X/13/10/1741
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