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Journal: MicromachinesVolume: 13Number: 466
Article: Investigation on the Thermal Characteristics of Enhancement-Mode p-GaN HEMT Device on Si Substrate Using Thermoreflectance Microscopy
  • Authors:
  • Hongyue Wang1,
  • Chao Yuan2 and
  • Guoguang Lu1
  • et al.
Link: https://www.mdpi.com/2072-666X/13/3/466

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