Novel High Isolation and High Capacitance Ratio RF MEMS Switch: Design, Analysis and Performance Verification
Abstract
:1. Introduction
2. Materials and Methods
2.1. Circuit Topology and Theory Analysis
2.2. Spring Constant and Actuation Voltage Analysis
2.3. Design of the High Capacitance Ratio RF MEMS Switch and Simulation
3. Fabrication, Measurements and Discussions
3.1. Fabrication
- The whole structure of the proposed high-isolation RF MEMS switch was fabricated on a high-resistivity silicon substrate with a thickness of 400 µm. At the bottom of the substrate is 0.2-μm-thick Au.
- SiO2 (0.3-μm-thick), which acts as an insulating layer, is grown on the substrate by means of thermal oxidation. The SiO2 layer can increase the adhesion of materials used in subsequent processes.
- The high-resistance DC bias lines are sputtered and patterned, and 0.16-μm-thick Si3N4 is deposited on top of the bias lines.
- The CPW transmission line consists of a 0.2-μm-thick Au center conductor and 2-μm-thick Au ground planes.
- The bottom electrode is covered with a 0.16-μm-thick Si3N4 layer, which is deposited using the plasma-enhanced chemical vapor deposition (PECVD) for DC isolation.
- A total of 0.2 µm Au was evaporated as the MIM floating metallic membrane.
- After the thermal curing process, a 2-μm-thick polyimide is used as the sacrificial layer.
- The anchor and beam are formed by electroplating for 1 h.
- A supercritical release method is used to release the polyimide sacrificial layer, so that the MEMS switch beam is be suspended.
3.2. Measurement and Results
3.2.1. Insertion Loss and Isolation
3.2.2. Capacitance Ratio
3.2.3. Actuation Voltage
3.2.4. Lifespan
3.3. Advancements
4. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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Name of Each Part | Material |
---|---|
MEMS beam | Au |
MIM floating metallic membrane | Au |
Dielectric layer | Si3N4 |
CPW transmission line | Au |
Substrate | High resistance silicon |
Author | Cup (fF) | Cdown (pF) | Cr | Insertion Loss (dB) | Isolation (dB) | Actuation Voltage (V) | Lifespan (Cycles) |
---|---|---|---|---|---|---|---|
Wang L F [13] | - | - | - | 0.77@6 GHz | 53@6 GHz | 15 | 107 |
Muhua Li [14] | 9.6 | 0.83 | 87 | 0.29@35 GHz | 20.5@ 35 GHz | 18.3 | 104 |
YQ Zhu [15] | - | 3.4 | - | <1.2@40 GHz | 60@35 GHz | 0.16 | 105 |
Park J [16] | - | - | - | 0.29@24 GHz | 30.1@24 GHz | 25 | 109 |
Persano A [17] | - | - | 12–16 | 0.8@25 GHz | 20@25 GHz | 25–40 | 106 |
Yang H H [18] | 190 | 1 | 5 | <1@ DC~20 GHz | 11@20 GHz | 65 | 104 |
MF.B. [19] | - | 1.27 | - | 0.68@40 GHz | 35.8@40 GHz | 23.6 | - |
Li-Ya M [20] | 140 | 7.31 | 52 | 5.65@40 GHz | 24.38@40 GHz | 3.04 | - |
Fouladi [11] | 23 | 2.1 | 91 | 0.98@20 GHz | 17.9@20 GHz | 82 | - |
This paper | 47.1 | 11.6 | 246.3 | 0.5@32 GHz | 35@32 GHz | 16 | 108 |
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Deng, Z.; Wang, Y.; Deng, K.; Lai, C.; Zhou, J. Novel High Isolation and High Capacitance Ratio RF MEMS Switch: Design, Analysis and Performance Verification. Micromachines 2022, 13, 646. https://doi.org/10.3390/mi13050646
Deng Z, Wang Y, Deng K, Lai C, Zhou J. Novel High Isolation and High Capacitance Ratio RF MEMS Switch: Design, Analysis and Performance Verification. Micromachines. 2022; 13(5):646. https://doi.org/10.3390/mi13050646
Chicago/Turabian StyleDeng, Zhongliang, Yucheng Wang, Kun Deng, Chengqi Lai, and Jiali Zhou. 2022. "Novel High Isolation and High Capacitance Ratio RF MEMS Switch: Design, Analysis and Performance Verification" Micromachines 13, no. 5: 646. https://doi.org/10.3390/mi13050646