Electric-Force Conversion Performance of Si-Based LiNbO3 Devices Based on Four Cantilever Beams
Abstract
:1. Introduction
2. Methods
2.1. Mechanism Analysis of Cantilever Beams Vibration
2.2. Experimental Design and Simulation
2.3. Analysis of Kinetic Characteristics
2.4. Devices Preparation Process
- a.
- Clean the Si-based bonding sheet to ensure clean surfaces (Figure 3a).
- b.
- A 2 μm thick SiO2 film is grown on the surface of Si layer for use as a hard pickle film layer when used for Si cavity etching (Figure 3b).
- c.
- The electrodes to be prepared by magnetron sputtering a Cr/Au (20 nm/200 nm) metal layer, followed by photolithography, development and ion beam etching (Figure 3c,d).
- d.
- Ion beam etching technique based on photolithography to complete the etching of 5 μm LiNbO3 piezoelectric beams (Figure 3e).
- e.
- Etching of the 2 μm SiO2 film is completed on the basis of step d using reactive ion etching technique (Figure 3f).
- f.
- Spraying photoresist on the basis of step e, ensuring adhesive thickness of at least 4 μm, followed by the deep Si etching process to complete Si beam etching with thickness of 100 μm (Figure 3g).
- g.
- Complete 2 μm SiO2 film and 400 μm Si substrate etching on the backside of bonded sheets (Figure 3h,i).
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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Symbol | Meaning | Numerical Value |
---|---|---|
Lmass | The length of the mass block | 3600 μm |
Wmass | The width of the mass block | 460 μm |
Lbeam | The length of the cantilever beam | 2260 μm |
Hbeam | The height of the cantilever beam | 100 μm |
ρLN | Density of LN | 4700 kg/m3 |
εrLN | Relative dielectric constants of LN | {43.6, 43.6, 29.16} |
ρSi | Density of Si | 2329 kg/m3 |
εrSi | Relative dielectric constants of Si | 11.7 |
vSi | Poisson’s ratios of Si | 0.28 |
YSi | Young’s modulus of Si. | 1.7 × 1011 Pa |
ρAu | Density of Au | 19,300 kg/m3 |
vAu | Poisson’s ratios of Au | 0.44 |
Mode of Simulation | Measurement Frequency | Description |
---|---|---|
1st | 11.338 kHz | flexure |
2nd | 21.953 kHz | torsion |
3rd | 23.547 kHz | torsion |
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Zhang, H.; Qiao, X.; Wei, H.; Li, X.; Wu, X.; Yu, N.; Lu, H.; Guo, T.; Chou, X.; Geng, W. Electric-Force Conversion Performance of Si-Based LiNbO3 Devices Based on Four Cantilever Beams. Micromachines 2023, 14, 1988. https://doi.org/10.3390/mi14111988
Zhang H, Qiao X, Wei H, Li X, Wu X, Yu N, Lu H, Guo T, Chou X, Geng W. Electric-Force Conversion Performance of Si-Based LiNbO3 Devices Based on Four Cantilever Beams. Micromachines. 2023; 14(11):1988. https://doi.org/10.3390/mi14111988
Chicago/Turabian StyleZhang, Huiyi, Xiaojun Qiao, Huifen Wei, Xiaohuang Li, Xiaohui Wu, Nanxin Yu, Hao Lu, Tao Guo, Xiujian Chou, and Wenping Geng. 2023. "Electric-Force Conversion Performance of Si-Based LiNbO3 Devices Based on Four Cantilever Beams" Micromachines 14, no. 11: 1988. https://doi.org/10.3390/mi14111988