Investigations of Sidewall Passivation Using the Sol-Gel Method on the Optoelectronic Performance for Blue InGaN Micro-LEDs
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Acknowledgments
Conflicts of Interest
Appendix A
References
- Liu, Z.; Lin, C.-H.; Hyun, B.-R.; Sher, C.-W.; Lv, Z.; Luo, B.; Jiang, F.; Wu, T.; Ho, C.-H.; Kuo, H.-C.; et al. Micro-light-emitting diodes with quantum dots in display technology. Light Sci. Appl. 2020, 9, 83. [Google Scholar] [CrossRef]
- Huang, Y.; Hsiang, E.-L.; Deng, M.-Y.; Wu, S.-T. Mini-LED, Micro-LED and OLED displays: Present status and future perspectives. Light Sci. Appl. 2020, 9, 105. [Google Scholar] [CrossRef] [PubMed]
- Lin, J.Y.; Jiang, H.X. Development of microLED. Appl. Phys. Lett. 2020, 116, 100502. [Google Scholar] [CrossRef]
- Wu, T.; Sher, C.-W.; Lin, Y.; Lee, C.-F.; Liang, S.; Lu, Y.; Huang Chen, S.-W.; Guo, W.; Kuo, H.-C.; Chen, Z. Mini-LED and Micro-LED: Promising Candidates for the Next Generation Display Technology. Appl. Sci. 2018, 8, 1557. [Google Scholar] [CrossRef] [Green Version]
- Green, R.P.; McKendry, J.J.D.; Massoubre, D.; Gu, E.; Dawson, M.D.; Kelly, A.E. Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes. Appl. Phys. Lett. 2013, 102, 091103. [Google Scholar] [CrossRef] [Green Version]
- Xiong, J.; Hsiang, E.-L.; He, Z.; Zhan, T.; Wu, S.-T. Augmented reality and virtual reality displays: Emerging technologies and future perspectives. Light Sci. Appl. 2021, 10, 216. [Google Scholar] [CrossRef]
- Wierer, J.J., Jr.; Tansu, N. III-Nitride Micro-LEDs for Efficient Emissive Displays. Laser Photonics Rev. 2019, 13, 1900141. [Google Scholar] [CrossRef]
- Tian, P.; McKendry, J.J.D.; Gong, Z.; Guilhabert, B.; Watson, I.M.; Gu, E.; Chen, Z.; Zhang, G.; Dawson, M.D. Size-dependent efficiency and efficiency droop of blue InGaN micro-light emitting diodes. Appl. Phys. Lett. 2012, 101, 231110. [Google Scholar] [CrossRef]
- Bulashevich, K.A.; Karpov, S.Y. Impact of surface recombination on efficiency of III-nitride light-emitting diodes. Phys. Status Solidi (RRL)–Rapid Res. Lett. 2016, 10, 480–484. [Google Scholar] [CrossRef]
- Hwang, D.; Mughal, A.; Pynn, C.D.; Nakamura, S.; DenBaars, S.P. Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs. Appl. Phys. Express 2017, 10, 032101. [Google Scholar] [CrossRef]
- Kou, J.; Shen, C.-C.; Shao, H.; Che, J.; Hou, X.; Chu, C.; Tian, K.; Zhang, Y.; Zhang, Z.-H.; Kuo, H.-C. Impact of the surface recombination on InGaN/GaN-based blue micro-light emitting diodes. Opt. Express 2019, 27, A643–A653. [Google Scholar] [CrossRef] [PubMed]
- Piprek, J. Efficiency droop in nitride-based light-emitting diodes. Phys. Status Solidi (A) 2010, 207, 2217–2225. [Google Scholar] [CrossRef]
- Verzellesi, G.; Saguatti, D.; Meneghini, M.; Bertazzi, F.; Goano, M.; Meneghesso, G.; Zanoni, E. Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies. J. Appl. Phys. 2013, 114, 071101. [Google Scholar] [CrossRef]
- Konoplev, S.S.; Bulashevich, K.A.; Karpov, S.Y. From Large-Size to Micro-LEDs: Scaling Trends Revealed by Modeling. Phys. Status Solidi (A) 2018, 215, 1700508. [Google Scholar] [CrossRef]
- Jiang, F.; Hyun, B.-R.; Zhang, Y.; Liu, Z. Role of Intrinsic Surface States in Efficiency Attenuation of GaN-Based Micro-Light-Emitting-Diodes. Phys. Status Solidi (RRL)–Rapid Res. Lett. 2021, 15, 2000487. [Google Scholar] [CrossRef]
- Yu, J.; Tao, T.; Liu, B.; Xu, F.; Zheng, Y.; Wang, X.; Sang, Y.; Yan, Y.; Xie, Z.; Liang, S.; et al. Investigations of Sidewall Passivation Technology on the Optical Performance for Smaller Size GaN-Based Micro-LEDs. Crystals 2021, 11, 403. [Google Scholar] [CrossRef]
- Liu, Y.; Feng, F.; Zhang, K.; Jiang, F.; Chan, K.-W.; Kwok, H.-S.; Liu, Z. Analysis of size dependence and the behavior under ultrahigh current density injection condition of GaN-based Micro-LEDs with pixel size down to 3 μm. J. Phys. D Appl. Phys. 2022, 55, 315107. [Google Scholar] [CrossRef]
- Wong, M.S.; Hwang, D.; Alhassan, A.I.; Lee, C.; Ley, R.; Nakamura, S.; DenBaars, S.P. High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition. Opt. Express 2018, 26, 21324–21331. [Google Scholar] [CrossRef]
- Wong, M.S.; Lee, C.; Myers, D.J.; Hwang, D.; Kearns, J.A.; Li, T.; Speck, J.S.; Nakamura, S.; DenBaars, S.P. Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation. Appl. Phys. Express 2019, 12, 097004. [Google Scholar] [CrossRef]
- Park, J.-H.; Pristovsek, M.; Cai, W.; Cheong, H.; Kumabe, T.; Lee, D.-S.; Seong, T.-Y.; Amano, H. Interplay of sidewall damage and light extraction efficiency of micro-LEDs. Opt. Lett. 2022, 47, 2250–2253. [Google Scholar] [CrossRef]
- Yu, L.; Lu, B.; Yu, P.; Wang, Y.; Ding, G.; Feng, Q.; Jiang, Y.; Chen, H.; Huang, K.; Hao, Z.; et al. Ultra-small size (1–20 μm) blue and green micro-LEDs fabricated by laser direct writing lithography. Appl. Phys. Lett. 2022, 121, 042106. [Google Scholar] [CrossRef]
- Smith, J.M.; Ley, R.; Wong, M.S.; Baek, Y.H.; Kang, J.H.; Kim, C.H.; Gordon, M.J.; Nakamura, S.; Speck, J.S.; DenBaars, S.P. Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1 μm in diameter. Appl. Phys. Lett. 2020, 116, 071102. [Google Scholar] [CrossRef]
- Sheen, M.; Ko, Y.; Kim, D.-U.; Kim, J.; Byun, J.-H.; Choi, Y.; Ha, J.; Yeon, K.Y.; Kim, D.; Jung, J.; et al. Highly efficient blue InGaN nanoscale light-emitting diodes. Nature 2022, 608, 56–61. [Google Scholar] [CrossRef] [PubMed]
- Wu, Y.; Liu, B.; Xu, F.; Sang, Y.; Tao, T.; Xie, Z.; Wang, K.; Xiu, X.; Chen, P.; Chen, D.; et al. High-efficiency green micro-LEDs with GaN tunnel junctions grown hybrid by PA-MBE and MOCVD. Photonics Res. 2021, 9, 1683–1688. [Google Scholar] [CrossRef]
- Park, J.; Choi, J.H.; Kong, K.; Han, J.H.; Park, J.H.; Kim, N.; Lee, E.; Kim, D.; Kim, J.; Chung, D.; et al. Electrically driven mid-submicrometre pixelation of InGaN micro-light-emitting diode displays for augmented-reality glasses. Nat. Photonics 2021, 15, 449–455. [Google Scholar] [CrossRef]
- Wong, M.S.; Back, J.; Hwang, D.; Lee, C.; Wang, J.; Gandrothula, S.; Margalith, T.; Speck, J.S.; Nakamura, S.; DenBaars, S.P. Demonstration of high wall-plug efficiency III-nitride micro-light-emitting diodes with MOCVD-grown tunnel junction contacts using chemical treatments. Appl. Phys. Express 2021, 14, 086502. [Google Scholar] [CrossRef]
- Lee, S.W.; Oh, D.C.; Goto, H.; Ha, J.S.; Lee, H.J.; Hanada, T.; Cho, M.W.; Yao, T.; Hong, S.K.; Lee, H.Y.; et al. Origin of forward leakage current in GaN-based light-emitting devices. Appl. Phys. Lett. 2006, 89, 132117. [Google Scholar] [CrossRef]
- Shin, D.-S.; Shim, J.-I. Understanding Microscopic Properties of Light-Emitting Diodes from Macroscopic Characterization: Ideality Factor, S-parameter, and Internal Quantum Efficiency. Phys. Status Solidi (A) 2022, 219, 2270019. [Google Scholar] [CrossRef]
- Lee, G.W.; Shim, J.-I.; Shin, D.-S. On the ideality factor of the radiative recombination current in semiconductor light-emitting diodes. Appl. Phys. Lett. 2016, 109, 031104. [Google Scholar] [CrossRef]
- Zhu, D.; Xu, J.; Noemaun, A.N.; Kim, J.K.; Schubert, E.F.; Crawford, M.H.; Koleske, D.D. The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes. Appl. Phys. Lett. 2009, 94, 081113. [Google Scholar] [CrossRef] [Green Version]
- Wang, Z.; Zhu, S.; Shan, X.; Yuan, Z.; Qian, Z.; Lu, X.; Fu, Y.; Tu, K.; Guan, H.; Cui, X.; et al. Red, green and blue InGaN micro-LEDs for display application: Temperature and current density effects. Opt. Express 2022, 30, 36403–36413. [Google Scholar] [CrossRef] [PubMed]
- Olivier, F.; Tirano, S.; Dupré, L.; Aventurier, B.; Largeron, C.; Templier, F. Influence of size-reduction on the performances of GaN-based micro-LEDs for display application. J. Lumin. 2017, 191, 112–116. [Google Scholar] [CrossRef]
Disclaimer/Publisher’s Note: The statements, opinions and data contained in all publications are solely those of the individual author(s) and contributor(s) and not of MDPI and/or the editor(s). MDPI and/or the editor(s) disclaim responsibility for any injury to people or property resulting from any ideas, methods, instructions or products referred to in the content. |
© 2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
Share and Cite
Huang, W.; Miao, X.; Liu, Z. Investigations of Sidewall Passivation Using the Sol-Gel Method on the Optoelectronic Performance for Blue InGaN Micro-LEDs. Micromachines 2023, 14, 566. https://doi.org/10.3390/mi14030566
Huang W, Miao X, Liu Z. Investigations of Sidewall Passivation Using the Sol-Gel Method on the Optoelectronic Performance for Blue InGaN Micro-LEDs. Micromachines. 2023; 14(3):566. https://doi.org/10.3390/mi14030566
Chicago/Turabian StyleHuang, Wenjun, Xiangyu Miao, and Zhaojun Liu. 2023. "Investigations of Sidewall Passivation Using the Sol-Gel Method on the Optoelectronic Performance for Blue InGaN Micro-LEDs" Micromachines 14, no. 3: 566. https://doi.org/10.3390/mi14030566