Towards Low-Temperature CVD Synthesis and Characterization of Mono- or Few-Layer Molybdenum Disulfide
Abstract
:1. Introduction
2. CVD Process Setup
Material System
- MoO3 powder—molybdenum (IV) oxide, 99.97%, 25 gms, Aldrich (St. Louis, MO, USA);
- Sulfur powder—sulfur, 99.98%, 50 gms, Aldrich;
- Substrate—Si/SiO2 (100), 100 mm diameter, P/Boron, 500 µm, from University Wafer (Boston, MA, USA);
- Seeding promoter—3,4,9,10-perylene-tetracarboxylic acid-dianhydride (PTCDA) [29];
- Ar gas Supply—Ultra-high purity, AR UHP 300, 336 CF, Airgas (Radnor, PA, USA);
- Two ceramic boats—0.5 in wide and 2 in long;
- Weighing scale with the lowest count of 0.01 mg.
3. Parametric Aspects of Obtaining Uniformly Large MoS2 Crystals Repeatably
3.1. Temperature Control
3.2. Position of Sulfur Boat
3.3. Ar Flow Rate
3.4. Suction Pump
3.5. Monitoring and Control
3.6. Effect of Sulfur Flux on the Quality of MoS2 Deposition
4. Conformance of Mono- or Few-Layer MoS2 with Quality Characteristics
5. Conclusions
Author Contributions
Funding
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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Precursor-1 | Precursor-2 | Carrier | Temp | Dist P1–P2 | Substrate | Time | Dep. Time | Sz of ML | Raman Shft | PL | Ref. |
---|---|---|---|---|---|---|---|---|---|---|---|
(mg) | (mg) | (sccm) | (°C/m) | (cm) | Treatment | (min) | (s) | (cm2) | (cm−1) | eV/nm | No |
Mo Thin Film | S (NM) | N2 (150–200) | 750 | NM | SiO2—Mo TF Used | 90 | 600 | 1 cm2 | 20.6 | NM | [12] |
MoO3 (3.2) | S (1500) | Ar (100) | 700 (15/m) | 17.5 | SiO2—Acetone (Air Plasma) | 51 | 600 | 20 µm | NM | NM | [14] |
Mo Thin Film | S (NM) | Ar+H2 (70) | 1000 (15/m) | NM | c-Sapphire | 60 | 1800 | 2 in dia | 22 | 627 & 623 | [15] |
MoO3 (NM) | S (NM) | Ar (150) | 850 | NM | SiO2—MoO2 TF | 180 | NM | 12 µm | 21 | NM | [17] |
MoO3 (10–30) | S (NM) | Ar (150/60) | 800 (10/m) | 25 | SiO2 | 80 | 600 | 300 µm | 20 | NM | [19] |
MoO3 (2) | S (100) | Ar (22) | 560 | 26 | SiO2—PTAS | 21 | 1800 | 60 µm | 20.8 | NM | [21] |
MoO3 (18) | S (180) | Ar (5) | 650 (15/m) | 16 | SiO2—rGO, PTAS, PTCDA | 43 | 180 | 5 µm | 20 | 1.83 | [29] |
MoO3 (15) | S (80) | Ar (10–500) | 760 (15/m) | 18 | SiO2—O2 Plasma | 51 | 1800 | 50 µm | 20.3 | 625 & 675 | [33] |
MoO3 (NM) | S (NM) | Ar (130) | 800 (25/m) | 22 | SiO2—Acet/2 Propanol | 32 | 1200 | 1 µm | 19.8 | 625 & 675 | [34] |
MoO3 (100) | S (200) | Ar (100) | 850 (13.5/m) | 30 | SiO2—O2 Plasma | 63 | 1200 | 2 cm2 | 20 | 1.89 | [35] |
MoO3 (15) | S (85) | Ar (100–200) | 650 (25/m) | 15–18 | Si/SiO2—PTCDA | 25 | 60–180 | 2 cm2 | 19 | 1.8–1.9 | TP |
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Shendokar, S.; Aryeetey, F.; Hossen, M.F.; Ignatova, T.; Aravamudhan, S. Towards Low-Temperature CVD Synthesis and Characterization of Mono- or Few-Layer Molybdenum Disulfide. Micromachines 2023, 14, 1758. https://doi.org/10.3390/mi14091758
Shendokar S, Aryeetey F, Hossen MF, Ignatova T, Aravamudhan S. Towards Low-Temperature CVD Synthesis and Characterization of Mono- or Few-Layer Molybdenum Disulfide. Micromachines. 2023; 14(9):1758. https://doi.org/10.3390/mi14091758
Chicago/Turabian StyleShendokar, Sachin, Frederick Aryeetey, Moha Feroz Hossen, Tetyana Ignatova, and Shyam Aravamudhan. 2023. "Towards Low-Temperature CVD Synthesis and Characterization of Mono- or Few-Layer Molybdenum Disulfide" Micromachines 14, no. 9: 1758. https://doi.org/10.3390/mi14091758