Article Versions Notes

Liu J, Xiong X, Li H, Huang X, Wang Y, Sheng Y, Liang Z, Yao R, Ning H, Wei X. Application of Solution-Processed High-Entropy Metal Oxide Dielectric Layers with High Dielectric Constant and Wide Bandgap in Thin-Film Transistors. Micromachines. 2024; 15(12):1465. https://doi.org/10.3390/mi15121465

Liu, Jun, Xin Xiong, Han Li, Xiangchen Huang, Yajun Wang, Yifa Sheng, Zhihao Liang, Rihui Yao, Honglong Ning, and Xiaoqin Wei. 2024. "Application of Solution-Processed High-Entropy Metal Oxide Dielectric Layers with High Dielectric Constant and Wide Bandgap in Thin-Film Transistors" Micromachines 15, no. 12: 1465. https://doi.org/10.3390/mi15121465

Liu, J., Xiong, X., Li, H., Huang, X., Wang, Y., Sheng, Y., Liang, Z., Yao, R., Ning, H., & Wei, X. (2024). Application of Solution-Processed High-Entropy Metal Oxide Dielectric Layers with High Dielectric Constant and Wide Bandgap in Thin-Film Transistors. Micromachines, 15(12), 1465. https://doi.org/10.3390/mi15121465