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Micromachines
Volume 15
Issue 2
10.3390/mi15020177
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Article

An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench Structures

by
Jiashu Qian
1,*,
Limeng Shi
1,
Michael Jin
1,
Monikuntala Bhattacharya
1,
Atsushi Shimbori
2,
Hengyu Yu
1,
Shiva Houshmand
1,
Marvin H. White
1 and
Anant K. Agarwal
1
1
Department of Electrical & Computer Engineering, The Ohio State University, Columbus, OH 43210, USA
2
Ford Motor Co., Dearborn, MI 48124, USA
*
Author to whom correspondence should be addressed.
Micromachines 2024, 15(2), 177; https://doi.org/10.3390/mi15020177
Submission received: 21 December 2023 / Revised: 11 January 2024 / Accepted: 17 January 2024 / Published: 25 January 2024
(This article belongs to the Special Issue III-V/III-N Materials and Devices, 2nd Edition)
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Abstract

The body diode degradation in SiC power MOSFETs has been demonstrated to be caused by basal plane dislocation (BPD)-induced stacking faults (SFs) in the drift region. To enhance the reliability of the body diode, many process and structural improvements have been proposed to eliminate BPDs in the drift region, ensuring that commercial SiC wafers for 1.2 kV devices are of high quality. Thus, investigating the body diode reliability in commercial planar and trench SiC power MOSFETs made from SiC wafers with similar quality has attracted attention in the industry. In this work, current stress is applied on the body diodes of 1.2 kV commercial planar and trench SiC power MOSFETs under the off-state. The results show that the body diodes of planar and trench devices with a shallow P+ depth are highly reliable, while those of the trench devices with the deep P+ implantation exhibit significant degradation. In conclusion, the body diode degradation in trench devices is mainly influenced by P+ implantation-induced BPDs. Therefore, a trade-off design by controlling the implantation depth/dose and maximizing the device performance is crucial. Moreover, the deep JFET design is confirmed to further improve the body diode reliability in planar devices.
Keywords: SiC; MOSFET; body diode; reliability; basal plane dislocation; planar; trench; P+ implantation; deep JFET SiC; MOSFET; body diode; reliability; basal plane dislocation; planar; trench; P+ implantation; deep JFET

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MDPI and ACS Style

Qian, J.; Shi, L.; Jin, M.; Bhattacharya, M.; Shimbori, A.; Yu, H.; Houshmand, S.; White, M.H.; Agarwal, A.K. An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench Structures. Micromachines 2024, 15, 177. https://doi.org/10.3390/mi15020177

AMA Style

Qian J, Shi L, Jin M, Bhattacharya M, Shimbori A, Yu H, Houshmand S, White MH, Agarwal AK. An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench Structures. Micromachines. 2024; 15(2):177. https://doi.org/10.3390/mi15020177

Chicago/Turabian Style

Qian, Jiashu, Limeng Shi, Michael Jin, Monikuntala Bhattacharya, Atsushi Shimbori, Hengyu Yu, Shiva Houshmand, Marvin H. White, and Anant K. Agarwal. 2024. "An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench Structures" Micromachines 15, no. 2: 177. https://doi.org/10.3390/mi15020177

APA Style

Qian, J., Shi, L., Jin, M., Bhattacharya, M., Shimbori, A., Yu, H., Houshmand, S., White, M. H., & Agarwal, A. K. (2024). An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench Structures. Micromachines, 15(2), 177. https://doi.org/10.3390/mi15020177

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