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Journal: Micromachines, 2024
Volume: 15
Number: 517

Article: Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure
Authors: by An-Chen Liu, Yu-Wen Huang, Hsin-Chu Chen and Hao-Chung Kuo
Link: https://www.mdpi.com/2072-666X/15/4/517

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