A Comparative Study of Methods for Calculating the Dislocation Density in GaN-on-Si Epitaxial Wafers
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Yan, Y.; Huang, J.; Pan, L.; Meng, B.; Wei, Q.; Yang, B. A Comparative Study of Methods for Calculating the Dislocation Density in GaN-on-Si Epitaxial Wafers. Micromachines 2024, 15, 954. https://doi.org/10.3390/mi15080954
Yan Y, Huang J, Pan L, Meng B, Wei Q, Yang B. A Comparative Study of Methods for Calculating the Dislocation Density in GaN-on-Si Epitaxial Wafers. Micromachines. 2024; 15(8):954. https://doi.org/10.3390/mi15080954
Chicago/Turabian StyleYan, Yujie, Jun Huang, Lei Pan, Biao Meng, Qiangmin Wei, and Bing Yang. 2024. "A Comparative Study of Methods for Calculating the Dislocation Density in GaN-on-Si Epitaxial Wafers" Micromachines 15, no. 8: 954. https://doi.org/10.3390/mi15080954