Electrical Properties and Reliability of AlGaN/GaN High Electron Mobility Transistor under RF Overdrive Stress at High Temperature
Abstract
:1. Introduction
2. Materials and Methods
3. Results
3.1. DC Characteristics
3.2. Pulse I–V Properties
3.3. Low-Frequency Noise
3.4. Electroluminescence Properties
4. Discussion
5. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Temperature | Current Collapse Ratio (Reference Point: Vds = 10 V, Vgs = −1.75 V) | |||||
---|---|---|---|---|---|---|
(−8 V, 0 V) | (−8 V, 10 V) | |||||
Fresh | After | Increment | Fresh | After | Increment | |
25 °C | 17.3% | 22.0% | 4.7% | 29.9% | 31.1% | 1.2% |
55 °C | 8.1% | 13.4% | 5.3% | 20.7% | 23.1% | 2.7% |
85 °C | 18.9% | 20.8% | 1.9% | 31.4% | 30.9% | −0.5% |
Characteristics | 25 °C | 55 °C | 85 °C |
---|---|---|---|
Idmax | ↓↓ | ↓ | ≈ |
Vth | ↑↑ | ↑ | ≈ |
Gmmax | ↓↓ | ↓ | ≈ |
Gate leakage current | ↓ | ↓ | ≈ |
Current collapse ratio | ↑ | ↑ | ≈ |
Nt | ↑ | ↑ | ↓ |
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Liu, C.; Chen, Y.; Xie, Y.; Liu, H.; Cai, Z. Electrical Properties and Reliability of AlGaN/GaN High Electron Mobility Transistor under RF Overdrive Stress at High Temperature. Micromachines 2024, 15, 1100. https://doi.org/10.3390/mi15091100
Liu C, Chen Y, Xie Y, Liu H, Cai Z. Electrical Properties and Reliability of AlGaN/GaN High Electron Mobility Transistor under RF Overdrive Stress at High Temperature. Micromachines. 2024; 15(9):1100. https://doi.org/10.3390/mi15091100
Chicago/Turabian StyleLiu, Chang, Yiqiang Chen, Yuhan Xie, Hongxia Liu, and Zongqi Cai. 2024. "Electrical Properties and Reliability of AlGaN/GaN High Electron Mobility Transistor under RF Overdrive Stress at High Temperature" Micromachines 15, no. 9: 1100. https://doi.org/10.3390/mi15091100