3D Numerical Simulation of a Z Gate Layout MOSFET for Radiation Tolerance
Abstract
:1. Introduction
2. Device Structure and Simulation
3. Results and Discussion
3.1. The Id-Vg Simulation Results
3.2. Comparison of Key Transistor Performance Parameters
4. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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Parameter | Value |
---|---|
Length of channel | 0.12 μm |
Width of channel | 0.21 μm |
Thickness of n-type poly gate | 100 nm |
Thickness of gate oxide | 2 nm |
Doping of source/drain region | 1.0 × 1019 cm−3 |
Depth of source/drain region | 100 nm |
Doping of p-type substrate | 4.0 × 1017 cm−3 |
Layout | Vth-pre (mV) | Vth-post (mV) | ΔVth (mV) |
---|---|---|---|
single gate | 363 | 138 | 226 |
enclosed gate | 374 | 374 | <1 |
Z gate | 354 | 329 | 25 |
Layout | Ioff-pre (A) | Ioff-post (A) | Increment |
---|---|---|---|
single gate | 4.58 × 10−10 | 3.44 × 10−6 | 3.44 μA |
enclosed gate | 7.91 × 10−10 | 7.95 × 10−10 | 0.004 nA |
Z gate | 6.46 × 10−9 | 1.17 × 10−8 | 5.24 nA |
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Wang, Y.; Shan, C.; Piao, W.; Li, X.-j.; Yang, J.-q.; Cao, F.; Yu, C.-h. 3D Numerical Simulation of a Z Gate Layout MOSFET for Radiation Tolerance. Micromachines 2018, 9, 659. https://doi.org/10.3390/mi9120659
Wang Y, Shan C, Piao W, Li X-j, Yang J-q, Cao F, Yu C-h. 3D Numerical Simulation of a Z Gate Layout MOSFET for Radiation Tolerance. Micromachines. 2018; 9(12):659. https://doi.org/10.3390/mi9120659
Chicago/Turabian StyleWang, Ying, Chan Shan, Wei Piao, Xing-ji Li, Jian-qun Yang, Fei Cao, and Cheng-hao Yu. 2018. "3D Numerical Simulation of a Z Gate Layout MOSFET for Radiation Tolerance" Micromachines 9, no. 12: 659. https://doi.org/10.3390/mi9120659