Numerical Investigation into Optoelectronic Performance of InGaN Blue Laser in Polar, Non-Polar and Semipolar Crystal Orientation
, Sharadindu Gopal Kiratnia 2, Priyo Nath Roy 1, Md. Mahmudul Hasan 3, Ashraful Hossain Howlader 4, Md. Shohanur Rahman 1, Md. Rafiqul Islam 5, Md. Masud Rana 2, Lway Faisal Abdulrazak 6,7, Ibrahim Mustafa Mehedi 8,9, Md. Shofiqul Islam 8 and Md. Biplob Hossain 2Round 1
Reviewer 1 Report
This is a well written article where the authors have done a thorough investigation into the numerical investigation into the optoelectronic performance of InGaN blue laser.
In this article the authors have presented a thorough numerical study of the band diagram, optical gain, frequency profile and output power of In0.17Ga0.83N/GaN laser in the polarized field along polar, non-polar and semi-polar crystal orientations. Since InGaN/GaN-based optoelectronic devices are being widely used due to their improvement of the quantum-confined stark effect, high polarization ratio and the optical gain, it is worth understanding the physics behind it. This article highlights why the crystal orientations of InGaN play a very important role in deciding the properties of this laser. Therefore, this study helps understand this material better.
The comparison of the (10-10), (10-12), (11-22) and (10-11) orientations reveal that the highest lasing power output and lowest threshold current are attained for (11-22) crystal orientation with zero quantum confined stark effect. These findings solve a puzzle of why a non-c axis-oriented crystal cut of In0.17Ga0.83N/GaN is an effective laser source.
The reviewer recommends accepting the article as is for publication.
Author Response
Thank you for recommending my article as is for publication.
Reviewer 2 Report
- As the simulation results are compared with practical devices, there are some offsets .Can the authors explain the reason? By the way, why there is no buffer layer AlN in the device structure?
- One of the most reliability issues of GaN devices is the defect or mismatch .Do the authors take it into consideration.
- How about the recent papers about simulation related to this paper.
- Does the authors consider the thermal effects, such as band gap narrowing?
- As for Green LEDs, the efficiency droops can be observed for practical devices. Do the authors take into consideration>
- The is a decrease of the slope of output power/ current. What is the mechanism.
Author Response
Dear Sir,
Please see the attachment regarding response to your valuable comments.
Author Response File: 
Author Response.docx
Reviewer 3 Report
The authors present an investigation into the optoelectronic performance and frequency response of In0.17Ga0.83N/GaN quantum well blue laser in polar, non-polar and semipolar orientations.
The paper does not have enough novelty to be published.
Author Response
Dear Sir,
Thanks for your valuable comments. The temperature-dependent band gap shrinkage and electron drift leakage-induced efficiency droop has been incorporated in revised manuscript. Our simulation approach to find output optical power and frequency response of non-c-axis InGaN blue laser hasn't been in literature to best of our knowledge.
Round 2
Reviewer 2 Report
The paper has been revised and is acceptable.
Reviewer 3 Report
The revised version is ok.
