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Journal: Crystals, 2020
Volume: 10
Number: 1092

Article: Experimental and Modeling Study on the High-Performance p++-GaAs/n++-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted
Authors: by Yudan Gou, Jun Wang, Yang Cheng, Yintao Guo, Xiao Xiao, Heng Liu, Shaoyang Tan, Li Zhou, Huomu Yang, Guoliang Deng and Shouhuan Zhou
Link: https://www.mdpi.com/2073-4352/10/12/1092

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