Article Versions Notes

Feil MW, Huerner A, Puschkarsky K, Schleich C, Aichinger T, Gustin W, Reisinger H, Grasser T. The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters. Crystals. 2020; 10(12):1143. https://doi.org/10.3390/cryst10121143

Feil, Maximilian W., Andreas Huerner, Katja Puschkarsky, Christian Schleich, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger, and Tibor Grasser. 2020. "The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters" Crystals 10, no. 12: 1143. https://doi.org/10.3390/cryst10121143

Feil, M. W., Huerner, A., Puschkarsky, K., Schleich, C., Aichinger, T., Gustin, W., Reisinger, H., & Grasser, T. (2020). The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters. Crystals, 10(12), 1143. https://doi.org/10.3390/cryst10121143