Next Article in Journal
Camphor Sulfonimine Compounds: Bottom-Up Design of MOFs from Organic Frameworks Based on X-rays and DFT-D3
Next Article in Special Issue
The Influence of Substitutional Defects of Transition Metal Elements on the Stability and Thermal Properties of Al at Finite Temperatures: A First-Principles Study
Previous Article in Journal
One Pot Synthesis, Surface, and Magnetic Properties of Ni–NiO@C Nanocomposites
Previous Article in Special Issue
A Computational Study on Polar ABiO3 (A = Ca, Zn, Mg) Compounds with Large Electric Polarization
 
 
Font Type:
Arial Georgia Verdana
Font Size:
Aa Aa Aa
Line Spacing:
Column Width:
Background:
Article

Ultrahigh-Density Superhard Hexagonal BN and SiC with Quartz Topology from Crystal Chemistry and First Principles

by
Samir F. Matar
1 and
Vladimir L. Solozhenko
2,*
1
CMMS, Lebanese German University, Jounieh P.O. Box 206, Lebanon
2
LSPM–CNRS, Université Sorbonne Paris Nord, 93430 Villetaneuse, France
*
Author to whom correspondence should be addressed.
Crystals 2023, 13(10), 1498; https://doi.org/10.3390/cryst13101498
Submission received: 28 September 2023 / Revised: 12 October 2023 / Accepted: 13 October 2023 / Published: 14 October 2023
(This article belongs to the Special Issue First Principles Calculation for Crystalline Materials)

Abstract

:
Based on superdense C6 with a quartz (qtz) topology, new ultrahigh-density hexagonal binary phases, qtz BN and qtz SiC, were identified via full geometry structure relaxations and ground state energies using calculations based on the quantum density functional theory (DFT) with a gradient GGA exchange–correlation XC functional. Like qtz C6, with respect to diamond, the resulting binary qtz BN and qtz SiC were found to be less cohesive than cubic BN and cubic SiC, respectively, but were confirmed to be mechanically (elastic constants) and dynamically (phonon band structures) stable. Higher densities of the new phases correlate with higher hardness values compared to cubic BN and cubic SiC. In contrast to the regular tetrahedra that characterize the cubic BN and SiC phases, the corner-sharing tetrahedra in the new phases are distorted, which accounts for their exceptional density and hardness. All three qtz phases were found to be semiconducting to insulators, with reduced band gaps compared to diamond, cubic BN, and cubic SiC.

1. Introduction

Diamond is the hardest known material and has a Vickers hardness (HV) of about 100 GPa and a density of ρ = 3.635 g/cm3 [1]. Its structure (space group Fm-3m) is formed by corner-sharing tetrahedra of sp3-hybridized carbon atoms with ∠C-C-C = 109.47° and is characterized by the highest atomic density (i.e., the number of atoms per unit cell volume) and highest density per valence electron of any material [2]. It has been claimed that a rare hexagonal form of diamond (lonsdaleite) (space group P63/mmc) with virtually the same density is stronger and stiffer than diamond [3].
The network topologies of diamond and lonsdaleite are dia and lon, respectively, and many theoretically predicted carbon allotropes have been identified using these topologies (see [4] and references therein). The topology determination for the new phases is now made easy with the TopCryst program [5]. Information on all carbon allotropes extracted from the literature is indexed in the “SACADA” database [6], which currently contains 703 allotropes.
Diamond (both cubic and hexagonal) is still considered to have superior atomic density, elastic moduli, and hardness [1]. Recently, however, several superdense (ρ > 3.635 g/cm3) carbon allotropes have been predicted from the first-principle studies [7,8], and hexagonal (space group P6222) C3 with assigned quartz topology (SACADA qtz #11) has even been claimed to have a hardness of 113 GPa [8], i.e., 15% harder than diamond. Also, very recently, we proposed a superdense (ρ = 3.666 g/cm3) ultrahard (HV ≈ 102 GPa) hexagonal C6 (space group P6522) allotrope with a qtz topology [9].
The quartz topology is also observed in binary (ZnTe) and ternary (GaAsO4, FePO4) compounds. In particular, under pressure, in addition to the cubic sphalerite structure (space group F-43m) characteristic of zinc chalcogenides, ZnTe also exhibits a trigonal α-HgS-type structure (space group P3121) [10] with a qtz topology. This may be because the Pauling electronegativity (χ) of the chalcogen decreases from oxygen (χ(O) = 3.44) to tellurium (χ(Te) = 2.10). With the knowledge that χ(Zn) = 1.65, ZnO is an ionic compound (Δχ|Zn-O|=1.79), while ZnTe is already a covalent compound (Δχ|Zn-Te| = 0.45).
In this regard, the aim of the present study is to address the challenging issue of the existence of ultrahigh-density polymorphs of compounds that are of great practical importance. We aimed to prove the existence of two known binary compounds, BN and SiC, in a quartz topology based on the previously studied qtz C6 [9]. For this purpose, we conducted accurate quantum mechanical calculations of crystal structures and physical properties in the framework of density functional Theory (DFT) [11,12].

2. Computational Framework

The structures of the binary compounds were all subjected to geometry relaxations of atomic positions and lattice constants down to the respective ground states characterized by minimum energies. The protocol consists of iterative calculations performed using the DFT-based plane-wave Vienna Ab initio Simulation Package (VASP) [13,14]. For atomic potentials, the projector augmented wave (PAW) method was used [14,15]. The exchange and correlation effects were treated using a generalized gradient approximation (GGA) scheme [16]. The relaxation of the atoms to the ground state geometry was carried out by applying a conjugate gradient algorithm [17]. A tetrahedron method [18], with corrections made according to the Methfessel–Paxton scheme [19], was used for geometry optimization and energy calculations. A special k-point sampling [20] was applied to approximate the Brillouin zone (BZ) integrals in the reciprocal space. For better reliability, the optimization of the structural parameters was carried out along with successive self-consistent cycles with increasing k-mesh until the forces on atoms were less than 0.02 eV/Å and the stress components had values below 0.003 eV/Å3. The plane waves energy cutoff was 400 eV.
Mechanical properties were derived from elastic constants calculations [21,22].
The phonons were calculated to verify the dynamic stability of the new phases. The phonon modes were computed following a protocol that considers harmonic approximation by operating finite displacements of the atoms around their equilibrium positions in different input files (POSCAR-YYY, where YYY is the displacement number), corresponding to configurations generated using the interface code “Phonopy” [23]. Calculations were then performed for all individual POSCAR-YYY. Then, the summation of the different resulting forces could be obtained for the different configurations. Finally, the phonon dispersion curves (bands) along the main directions of the hexagonal Brillouin zone were plotted.
Crystal information files (CIF); structure sketches, including tetrahedral representations; and illustrations of the charge density plots were generated using VESTA graphics software (version 3.5.7) [24]. The electronic band structures and densities of states were obtained using the full-potential augmented spherical wave ASW method based on DFT using the same GGA scheme as above [25].

3. Crystal Chemistry

The structure of qtz C6 is shown in Figure 1a. A differentiation of carbon into two different sites was highlighted by resolving the initial C6 structure (space group P6522, No. 179) with unique (6a) sites [9] into carbon atoms with (3c) and (3d) Wyckoff positions within space group P6422, No. 181 (as shown in Table 1). Such an elementary modification allowed us to consider the binary compounds, B3N3 and Si3C3. The lattice parameters of the ground state structures are given in columns 3 to 5 of Table 1. The corresponding crystal structures are shown in Figure 1b–c with ball-and-stick and tetrahedral representations, the latter being characterized by corner-sharing irregular tetrahedra (vide infra). The atoms are described using general Wyckoff positions at (3c) ½, 0, 0 and at (3d) ½, 0, ½.
Differences are observed in the volumes (total and atom-averaged) and in the interatomic distances, which increase along the series due to the increase in the respective atomic radii. If we look at the angles related to the constituent tetrahedra, they significantly differ from the regular tetrahedral angle (∠109.47°), thus indicating the specificity of the qtz topology.
All three qtz phases were found to be cohesive with negative Ecoh/atom values (see Table 1), which are systematically lower than the corresponding values of diamond (−2.43 eV), cubic BN (−2.63 eV) and cubic SiC (−1.72 eV).

4. Mechanical Properties from the Elastic Constants

The analysis of the mechanical behavior was carried out using the elastic properties by performing finite distortions of the lattice. The phase is then described by the bulk (B) and the shear (G) moduli obtained by averaging the elastic constants. Here, we used Voigt’s method (cf. original [21] and modern [22] studies) based on a uniform strain. The calculated sets of elastic constants Cij (i and j corresponding to directions) are given in Table 2. All Cij values are positive. The elastic constants of qtz C6 have the largest values, close to diamond [1], and smaller magnitudes were obtained for qtz BN and qtz SiC. The bulk (BV) and shear (GV) moduli (see the last two columns of Table 2) were calculated using the equations for the hexagonal system [22]:
BV = 1/9 {2(C11 + C12) + 4C13 + C33}
GV = 1/30 {C11 +C12 + 2C33 − 4C13 + 12C44 + 12C66}
qtz C6 has the largest moduli, close to the accepted values for diamond (BV =445 GPa and GV = 550 GPa [1]), while the binary phases, especially qtz SiC, have much smaller values.
Four modern theoretical models [26,27,28,29] have been used to predict the Vickers hardness (HV) of new phases. The thermodynamic (T) model [26], which is based on thermodynamic properties and crystal structures, generally shows good agreement with experiments, and is therefore recommended for the hardness evaluation of superhard and ultrahard phases [30]. The Vickers hardness and bulk modulus values calculated using this model are summarized in Table 3. The Lyakhov–Oganov (LO) model [27] considers the topology of the crystal structure, the strength of covalent bonding, the degree of ionicity and directionality; and the empirical models, Mazhnik–Oganov (MO) [28] and Chen–Niu (CN) [29], are based on elastic properties, namely bulk and shear moduli. As previously shown [30], in the case of superhard (HV ≥ 40 GPa) compounds of light elements, the Lyakhov–Oganov model gives slightly underestimated values of hardness, while empirical models are not reliable. Fracture toughness (KIc) was evaluated using the Mazhnik–Oganov model [28]. Table 4 shows the hardness and other mechanical properties of the dense carbon, BN, and SiC phases that are calculated using all four models.
Notably, the density of all three phases with a quartz topology is higher than the density of the corresponding cubic phases (see Table 3); qtz C6, qtz BN and qtz SiC are ultrahigh-density phases.
The hardness and mechanical properties of qtz C6 are, as expected, close to those of diamond and lonsdaleite. The corresponding values for qtz BN and especially for qtz SiC are significantly lower and are at the level of the mechanical properties of cubic boron nitride and cubic silicon carbide, respectively. It should be noted, however, that the hardness of all three phases with quartz topology is about 5% higher than that of the corresponding cubic phases. Such increased hardness is likely related to the ultrahigh densities of the qtz phases resulting from the distorted tetrahedron building blocks.

5. Dynamic and Thermal Properties from the Phonons

5.1. Phonon Band Structures

Following the protocol presented in the “Computational framework” section, the phonon band structures were plotted along the hexagonal Brillouin zone in the reciprocal space. The corresponding band structures for qtz C6, qtz BN, and qtz SiC are shown in Figure 2 (red lines).
The bands develop along the main lines (horizontal direction) of the hexagonal Brillouin zone (reciprocal k-space). The vertical direction represents the frequencies ω, which are given in terahertz (THz). There are 3N phonon total modes with three acoustic modes starting from zero frequency (ω = 0 at the Γ point, center of the Brillouin zone), up to a few terahertz, and then 3N-3 optical modes are observed at higher frequencies. The three acoustic modes correspond to the lattice rigid translation modes with two transverse modes and one longitudinal mode. The remaining bands correspond to the optical modes. In all three subfigures, there are no negative frequencies, and the corresponding carbon allotrope and two binary phases are dynamically stable. The latter indicates that these phases, once synthesized, can exist at ambient conditions. In qtz C6, the highest band culminates in the vicinity of ω ~ 40 THz, a value that has been observed for diamond by Raman spectroscopy [39]. Binary compounds are characterized by lower energy bands, but a similarity between the BN band structure and the phonons of the carbon allotrope can be observed. Finally, SiC phonons show the highest bands at 10 THz less than BN.

5.2. Thermodynamic Properties

The thermodynamic properties of the new phases were calculated from the phonon frequencies using the statistical thermodynamic approach [40] on a high-precision sampling mesh in the Brillouin zone. The temperature dependencies of the heat capacity at constant volume (Cv) and entropy (S) of qtz C6, qtz BN, and qtz SiC are shown in Figure 3 in comparison with experimental Cv data for diamond [41,42], cubic BN [43] and cubic SiC [44]. Systematically, the heat capacities of all three phases with quartz topology formed by distorted tetrahedra are found to be higher than the heat capacities of the corresponding cubic phases.

6. Electronic Band Structures and Density of States

Using the crystal structure parameters given in Table 1, the electronic band structures were obtained using the all-electron DFT-based augmented spherical method (ASW) [25] and are shown in Figure 4. The bands (blue lines) develop along the main directions of the primitive hexagonal Brillouin zones to the extent that all three phases exhibit band structures characterized by energy gaps between the valence band (VB) and the empty conduction band (CB). The energy reference along the vertical energy axis is considered as the top of the VB: (E-EV). qtz C6 has a band gap half of size of that of diamond (~5 eV), showing a different behavior between dia and qtz topologies in the electronic structure behavior. The largest band gap is observed for qtz BN, which remains smaller than for cubic BN. The same feature of reduced band gap is observed for qtz SiC. It is also relevant to highlight that continuous VB in qtz C6 versus two blocks in the binary compounds has a separation between low-energy lying s-like states and higher-energy lying p-like states up to EV. In conclusion, the phases with qtz topology are provided with an enhanced covalence.
The band structure features are reflected in the site-projected electronic densities of states (DOS), as shown in Figure 5 with energy along the horizontal axis and DOS as 1/eV units along the vertical axis. The vertical red line represents the top of the valence band. qtz C6, expressed as C13C23, is characterized by identical DOS for both sites and a continuous VB extending over ~27 eV, indicating the purely covalent nature of the carbon allotrope. The sharp DOS peak at 1 eV below EV belongs to the carbon p-states, which are more localized than the s-states smeared in the lower part of the VB. The (empty) CB also shows structured p-DOS. Turning to the binary compounds, the VB is now divided into two parts corresponding to s-states up to −15 eV in qtz BN (−9 eV in qtz SiC), followed by a broad block up to EV. The band gap in qtz BN is the largest (~5 eV) which is close to c-BN as stated above, while qtz SiC has the smallest band gap of about 1.5 eV.
More explanation can be found from electronegativity χ according to Pauling: χB = 2.04; χC = 2.55; χN = 3.04, and χSi = 1.80; one obtains Δχ|B-N| = 1 and Δχ|Si-C| = 0.75. These results indicate a larger covalence of SiC compared to the polar covalence of BN, hence the larger band gap in boron nitride.

7. Conclusions

This paper presents a new class of binary compounds with quartz topology using boron nitride and silicon carbide as representative compounds. The structures of qtz BN and qtz SiC were constructed from the template carbon allotrope C6 with a quartz topology. It has been shown that the new phases are the densest among all known BN and SiC polymorphs. Accordingly, they are characterized by the highest hardness. In addition to mechanical stability, the new phases are also dynamically stable, as indicated by the phonon band structures. The heat capacities of the new phases calculated from the phonon frequencies were found to be higher than those of the corresponding cubic phases; this is also true for qtz C6 when compared to diamond. It can be assumed that all of the above is a consequence of the presence of distorted tetrahedra in the crystal structures of the phases with quartz topology. Finally, from the analysis of electronic band structures and densities of states, it was found that the new phases are insulating (BN) to semiconducting (SiC), with band gaps between the filled valence band VB and the empty conduction band CB.

Author Contributions

Conceptualization, S.F.M.; methodology, S.F.M. and V.L.S.; investigation, S.F.M. and V.L.S.; formal analysis, S.F.M. and V.L.S.; data curation, S.F.M. and V.L.S.; visualization, S.F.M. and V.L.S.; validation, S.F.M. and V.L.S.; resources, S.F.M.; writing—original draft preparation, S.F.M.; writing—review and editing, V.L.S. All authors have read and agreed to the published version of the manuscript.

Funding

This research received no external funding.

Data Availability Statement

The data presented in this study are available upon reasonable request.

Conflicts of Interest

The authors declare no conflict of interest.

References

  1. Brazhkin, V.V.; Solozhenko, V.L. Myths about new ultrahard phases: Why materials that are significantly superior to diamond in elastic moduli and hardness are impossible. J. Appl. Phys. 2019, 125, 130901. [Google Scholar] [CrossRef]
  2. Stishov, S.M. Energy, compressibility and covalency in the carbon subgroup. Philos. Mag. Lett. 2000, 80, 125–128. [Google Scholar] [CrossRef]
  3. Li, Q.; Sun, Y.; Li, Z.; Zhou, Y. Lonsdaleite—A material stronger and stiffer than diamond than diamond. Scr. Mater. 2011, 65, 229–232. [Google Scholar]
  4. Öhrström, L.; O’Keeffe, M. Network topology approach to new allotropes of the group 14 elements. Z. Kristallogr. 2013, 228, 343–346. [Google Scholar] [CrossRef]
  5. Shevchenko, A.P.; Shabalin, A.A.; Karpukhin, I.Y.; Blatov, V.A. Topological representations of crystal structures: Generation, analysis and implementation in the TopCryst system. Sci. Technol. Adv. Mat. 2022, 2, 250–265. [Google Scholar] [CrossRef]
  6. Hoffmann, R.; Kabanov, A.A.; Golov, A.A.; Proserpio, D.M. Homo Citans and carbon allotropes: For an ethics of citation. Angew. Chem. Int. Ed. 2016, 55, 10962–10976. [Google Scholar] [CrossRef]
  7. Zhu, Q.; Oganov, A.R.; Salvadó, M.A.; Pertierra, P.; Lyakhov, A.O. Denser than diamond: Ab initio search for superdense carbon allotropes. Phys. Rev. B 2011, 83, 193410. [Google Scholar] [CrossRef]
  8. Luo, B.; Wu, L.; Zhang, Z.; Li, G.; Tian, E. A triatomic carbon and derived pentacarbides with superstrong mechanical properties. iScience 2022, 25, 104712. [Google Scholar] [CrossRef]
  9. Matar, S.F.; Solozhenko, V.L. First principles search for novel ultrahard high-density carbon allotropes: Hexagonal C6, C9 and C12. J. Superhard Mater. 2023, 45, 239–248. [Google Scholar] [CrossRef]
  10. McMahon, M.I.; Nelmes, R.J.; Wright, N.G.; Allan, D.R. Crystal structure studies of II-VI semiconductors using angle-dispersive diffraction techniques with an image-plate detector. AIP Conf. Proc. 1994, 309, 633–636. [Google Scholar]
  11. Hohenberg, P.; Kohn, W. Inhomogeneous electron gas. Phys. Rev. B 1964, 136, 864–871. [Google Scholar] [CrossRef]
  12. Kohn, W.; Sham, L. Self-consistent equations including exchange and correlation effects. Phys. Rev. A 1965, 140, 1133–1138. [Google Scholar] [CrossRef]
  13. Kresse, G.; Furthmüller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 1996, 54, 11169. [Google Scholar] [CrossRef] [PubMed]
  14. Kresse, G.; Joubert, J. From ultrasoft pseudopotentials to the projector augmented wave. Phys. Rev. B 1999, 59, 1758–1775. [Google Scholar] [CrossRef]
  15. Blöchl, P.E. Projector augmented wave method. Phys. Rev. B 1994, 50, 17953–17979. [Google Scholar] [CrossRef]
  16. Perdew, J.; Burke, K.; Ernzerhof, M. The Generalized Gradient Approximation made simple. Phys. Rev. Lett. 1996, 77, 3865–3868. [Google Scholar] [CrossRef]
  17. Press, W.H.; Flannery, B.P.; Teukolsky, S.A.; Vetterling, W.T. Numerical Recipes, 2nd ed.; Cambridge University Press: New York, NY, USA, 1986. [Google Scholar]
  18. Blöchl, P.; Jepsen, O.; Anderson, O. Improved tetrahedron method for Brillouin-zone integrations. Phys. Rev. B 1994, 49, 16223–16233. [Google Scholar] [CrossRef]
  19. Methfessel, M.; Paxton, A. High-precision sampling for Brillouin-zone integration in metals. Phys. Rev. B 1989, 40, 3616–3621. [Google Scholar] [CrossRef] [PubMed]
  20. Monkhorst, H.; Pack, J. Special k-points for Brillouin Zone integration. Phys. Rev. B 1976, 13, 5188–5192. [Google Scholar] [CrossRef]
  21. Voigt, W. Über die Beziehung zwischen den beiden Elasticitätsconstanten isotroper Körper. Annal. Phys. 1889, 274, 573–587. [Google Scholar] [CrossRef]
  22. Blaschke, D.N. Averaging of elastic constants for polycrystals. J. Appl. Phys. 2017, 122, 145110. [Google Scholar] [CrossRef]
  23. Togo, A.; Tanaka, I. First principles phonon calculations in materials science. Scr. Mater. 2015, 108, 1–5. [Google Scholar] [CrossRef]
  24. Momma, K.; Izumi, F. VESTA3 for three-dimensional visualization of crystal, volumetric and morphology data. J. Appl. Crystallogr. 2011, 44, 1272–1276. [Google Scholar] [CrossRef]
  25. Eyert, V. Basic notions and applications of the augmented spherical wave method. Int. J. Quantum Chem. 2000, 77, 1007–1031. [Google Scholar] [CrossRef]
  26. Mukhanov, V.A.; Kurakevych, O.O.; Solozhenko, V.L. The interrelation between hardness and compressibility of substances and their structure and thermodynamic properties. J. Superhard Mater. 2008, 30, 368–378. [Google Scholar] [CrossRef]
  27. Lyakhov, A.O.; Oganov, A.R. Evolutionary search for superhard materials: Methodology and applications to forms of carbon and TiO2. Phys. Rev. B 2011, 84, 092103. [Google Scholar] [CrossRef]
  28. Mazhnik, E.; Oganov, A.R. A model of hardness and fracture toughness of solids. J. Appl. Phys. 2019, 126, 125109. [Google Scholar] [CrossRef]
  29. Chen, X.-Q.; Niu, H.; Li, D.; Li, Y. Modeling hardness of polycrystalline materials and bulk metallic glasses. Intermetallics 2011, 19, 1275–1281. [Google Scholar] [CrossRef]
  30. Solozhenko, V.L.; Matar, S.F. Prediction of novel ultrahard phases in the B–C–N system from first principles: Progress and problems. Materials 2023, 16, 886. [Google Scholar] [CrossRef]
  31. Bindzus, N.; Straasø, T.; Wahlberg, N.; Becker, J.; Bjerg, L.; Lock, N.; Dippel, A.-C.; Iversen, B.B. Experimental determination of core electron deformation in diamond. Acta Cryst. A 2014, 70, 39–48. [Google Scholar] [CrossRef]
  32. Ownby, P.D.; Yang, X.; Liu, J. Calculated X-ray diffraction data for diamond polytypes. J. Am. Ceram. Soc. 1992, 75, 1876–1883. [Google Scholar] [CrossRef]
  33. Solozhenko, V.L.; Chernyshev, V.V.; Fetisov, G.V.; Rybakov, V.B.; Petrusha, I.A. Structure analysis of the cubic boron nitride crystals. J. Phys. Chem. Solids 1990, 51, 1011–1012. [Google Scholar] [CrossRef]
  34. Zhang, J.S.; Bass, J.D.; Taniguchi, T.; Goncharov, A.F.; Chang, Y.-Y.; Jacobsen, S.D. Elasticity of cubic boron nitride under ambient conditions. J. Appl. Phys. 2011, 109, 063521. [Google Scholar] [CrossRef]
  35. Kurdyumov, A.V.; Solozhenko, V.L.; Zelyavski, W.B. Lattice parameters of boron nitride polymorphous modifications as a function of their crystal-structure perfection. J. Appl. Crystallogr. 1995, 28, 540–545. [Google Scholar] [CrossRef]
  36. Solozhenko, V.L.; Häusermann, D.; Mezouar, M.; Kunz, M. Equation of state of wurtzitic boron nitride to 66 GPa. Appl. Phys. Lett. 1998, 72, 1691–1693. [Google Scholar] [CrossRef]
  37. Li, Z.; Bradt, R.C. Thermal expansion of the cubic (3C) polytype of SiC. J. Mater. Sci. 1986, 21, 4366–4368. [Google Scholar] [CrossRef]
  38. Lambrecht, W.R.L.; Segall, B.; Methfessel, M.; van Schilfgaarde, M. Calculated elastic constants and deformation potentials of cubic SiC. Phys. Rev. B 1991, 44, 3685–3694. [Google Scholar] [CrossRef]
  39. Krishnan, R.S. Raman spectrum of diamond. Nature 1945, 155, 171. [Google Scholar] [CrossRef]
  40. Dove, M.T. Introduction to Lattice Dynamics; Cambridge University Press: New York, NY, USA, 1993. [Google Scholar]
  41. DeSorbo, W. Specific heat of diamond at low temperatures. J. Chem. Phys. 1953, 21, 876–880. [Google Scholar] [CrossRef]
  42. Victor, A.C. Heat capacity of diamond at high temperatures. J. Chem. Phys. 1962, 36, 1903–1911. [Google Scholar] [CrossRef]
  43. Solozhenko, V.L.; Gavrichev, K.S. Thermodynamic Properties of Boron Nitride; Wide Band Gap Electronic Materials; Springer: Berlin/Heidelberg, Germany, 1995; pp. 377–392. [Google Scholar]
  44. Glushko, V.P.; Gurvich, L.V.; Bergman, G.A. (Eds.) Thermodynamic Properties of Individual Substances; Nauka: Moscow, Russia, 1978; Volume 2. (In Russian) [Google Scholar]
Figure 1. Ball-and-stick and tetrahedral representations of the crystal structures of three phases with quartz topology: (a) C6 or C13C23 (cf. Table 1) (brown and white balls for C1 and C2, respectively), (b) BN (green and gray balls for B and N), (c) SiC (blue and brown balls for Si and C).
Figure 1. Ball-and-stick and tetrahedral representations of the crystal structures of three phases with quartz topology: (a) C6 or C13C23 (cf. Table 1) (brown and white balls for C1 and C2, respectively), (b) BN (green and gray balls for B and N), (c) SiC (blue and brown balls for Si and C).
Crystals 13 01498 g001
Figure 2. Phonons band structures of qtz C6 (a), qtz BN (b) and qtz SiC (c).
Figure 2. Phonons band structures of qtz C6 (a), qtz BN (b) and qtz SiC (c).
Crystals 13 01498 g002
Figure 3. Heat capacity at constant volume and entropy of qtz C6 (a), qtz BN (b), and qtz SiC (c) as functions of temperature. Experimental heat capacity data for diamond [41,42], cubic BN [43] and cubic SiC [44] are shown as gray, cyan, and magenta symbols, respectively.
Figure 3. Heat capacity at constant volume and entropy of qtz C6 (a), qtz BN (b), and qtz SiC (c) as functions of temperature. Experimental heat capacity data for diamond [41,42], cubic BN [43] and cubic SiC [44] are shown as gray, cyan, and magenta symbols, respectively.
Crystals 13 01498 g003
Figure 4. Electronic band structures of qtz C6 (a), qtz BN (b), and qtz SiC (c).
Figure 4. Electronic band structures of qtz C6 (a), qtz BN (b), and qtz SiC (c).
Crystals 13 01498 g004
Figure 5. Site projected density of states of qtz C6 (a), qtz BN (b), and qtz SiC (c).
Figure 5. Site projected density of states of qtz C6 (a), qtz BN (b), and qtz SiC (c).
Crystals 13 01498 g005
Table 1. Crystal structure parameters of phases with quartz topology.
Table 1. Crystal structure parameters of phases with quartz topology.
P6422 (No. 181)C6 (C13C23)qtz BNqtz SiC
a, Å2.5982.5953.079
c, Å5.5865.7997.054
Vcell, Å332.6533.8357.90
<Vatom> Å35.445.649.65
Shortest bond, Å1.5981.641.936
Angles (deg.)108.73/90.52106.64/92.0105.26/93.01
Atomic positionsC1 (3c) ½, 0, 0B (3c) ½, 0, 0Si (3c) ½, 0, 0
C2 (3d) ½, 0, ½ N (3d) ½, 0, ½C (3d) ½, 0, ½
Etotal, eV−47.87−46.65−41.79
Ecoh/atom, eV−1.38−1.73−1.15
Table 2. Elastic constants (Cij) of phases with quartz topology. Bulk (BV) and shear (GV) moduli calculated via Voight averaging. All values are in GPa.
Table 2. Elastic constants (Cij) of phases with quartz topology. Bulk (BV) and shear (GV) moduli calculated via Voight averaging. All values are in GPa.
C11C12C13C33C44C66BVGV
qtz C6 [9]118488631161548539440546
qtz BN8921641091013364342396370
qtz SiC4488797598180201228197
Table 3. Vickers hardness (HV) and bulk moduli (B0) of dense carbon, BN, and SiC phases calculated using the thermodynamic model of hardness [26].
Table 3. Vickers hardness (HV) and bulk moduli (B0) of dense carbon, BN, and SiC phases calculated using the thermodynamic model of hardness [26].
Space Groupa = b (Å)c (Å)ρ (g/cm3)HV (GPa)B0 (GPa)
DiamondFd-3m3.56661 [31]3.51798445 [1]
LonsdaleiteP63/mmc2.5221 [32]4.1186 [32]3.51697443
qtz C3 #180 [7]P62222.605 [7]2.801 [7]3.635101460
qtz C3 #180 [8]P62222.613 [8]2.811 [8]3.600100456
qtz C6 #181P62222.59705.58653.667102464
c-BN #216F-43m3.6160 [33]3.48755381 [34]
w-BN #186P63/mc2.5505 [35]4.210 [35]3.47554375 [36]
qtz BN #181P64222.59545.79933.65458395
SiC (3C) #216F-43m4.3581 [37]3.21834238
qtz SiC #180P62223.07877.05373.45036255
Table 4. Mechanical properties of the dense carbon, BN and SiC phases: Vickers hardness (HV), bulk modulus (B), shear modulus (G), Young’s modulus €, Poisson’s ratio (ν), and fracture toughness (KIc).
Table 4. Mechanical properties of the dense carbon, BN and SiC phases: Vickers hardness (HV), bulk modulus (B), shear modulus (G), Young’s modulus €, Poisson’s ratio (ν), and fracture toughness (KIc).
HVBGVE **ν **KIc 
T *LO MO CN §B0 *BV
GPa MPa·m½
Diamond989010093445 [1]530 [1]11380.0746.4
Lonsdaleite9790999444343252111150.0706.2
qtz C3 #180 [7]1019088 [7]460433 [7]
qtz C3 #180 [8]10088113 [8]110456452 [8]587 [8]12290.0476.8
qtz C6 #1811029010410046444054611590.0616.4
c-BN #21655507367381 [34]399 [34]8870.1124.8
w-BN #18654507265375 [36]3903978890.1205.1
qtz BN #181585163563953963708470.1436.4
SiC (3C) #21634303235238225 ††199 ††461 ††0.153 ††3.3
qtz SiC #180363131342552281974600.1653.3
* Ref. [26]; Ref. [27]; Ref. [28]; § Ref. [29]; ** E and ν values calculated using isotropic approximation. †† Calculated via Voigt averaging of literature data on elastic constants [38].
Disclaimer/Publisher’s Note: The statements, opinions and data contained in all publications are solely those of the individual author(s) and contributor(s) and not of MDPI and/or the editor(s). MDPI and/or the editor(s) disclaim responsibility for any injury to people or property resulting from any ideas, methods, instructions or products referred to in the content.

Share and Cite

MDPI and ACS Style

Matar, S.F.; Solozhenko, V.L. Ultrahigh-Density Superhard Hexagonal BN and SiC with Quartz Topology from Crystal Chemistry and First Principles. Crystals 2023, 13, 1498. https://doi.org/10.3390/cryst13101498

AMA Style

Matar SF, Solozhenko VL. Ultrahigh-Density Superhard Hexagonal BN and SiC with Quartz Topology from Crystal Chemistry and First Principles. Crystals. 2023; 13(10):1498. https://doi.org/10.3390/cryst13101498

Chicago/Turabian Style

Matar, Samir F., and Vladimir L. Solozhenko. 2023. "Ultrahigh-Density Superhard Hexagonal BN and SiC with Quartz Topology from Crystal Chemistry and First Principles" Crystals 13, no. 10: 1498. https://doi.org/10.3390/cryst13101498

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

Article Metrics

Back to TopTop