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Journal: Crystals, 2023
Volume: 13
Number: 736
Article:
Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices
Authors:
by
Alan G. Jacobs, Boris N. Feigelson, Joseph A. Spencer, Marko J. Tadjer, Jennifer K. Hite, Karl D. Hobart and Travis J. Anderson
Link:
https://www.mdpi.com/2073-4352/13/5/736
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