Influence of the Acetylene Flow Rate and Process Pressure on the Carbon Deposition Behavior by Thermal Chemical Vapor Deposition Process
Abstract
:1. Introduction
2. Experimental Method
2.1. Graphene Synthesis
2.2. Graphene Characterization
3. Results and Discussion
3.1. Surface Morphology
3.2. Mechanical Properties (Hardness)
3.3. Electrical Properties (Sheet Resistance)
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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Transition Metal | Carbon Solubility at 1000 °C | Growth Mechanism |
---|---|---|
Copper (Cu) | 0.03 wt.% | Penetration [15,16] |
Nickel (Ni) | 2.02 wt.% | Surface deposition [17] |
Cobalt (Co) | 3.41 wt.% | Segregation [18] |
Platinum (Pd) | 5.98 wt.% | Segregation [19,20] |
Iron (Fe) | 7.91 wt.% | Segregation [21] |
Germanium (Ge) | 0.00 wt.% | Surface deposition [22,23] |
wt.% | C | Si | Mn | P | S | Ni | Cr | Mo |
---|---|---|---|---|---|---|---|---|
AISI 1006 | 0.049 | 0.003 | 0.232 | 0.013 | 0.008 | 0.085 | 0.056 | 0.041 |
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Kwon, G.-H.; Choi, B.; Lee, Y.-K.; Moon, K. Influence of the Acetylene Flow Rate and Process Pressure on the Carbon Deposition Behavior by Thermal Chemical Vapor Deposition Process. Crystals 2024, 14, 782. https://doi.org/10.3390/cryst14090782
Kwon G-H, Choi B, Lee Y-K, Moon K. Influence of the Acetylene Flow Rate and Process Pressure on the Carbon Deposition Behavior by Thermal Chemical Vapor Deposition Process. Crystals. 2024; 14(9):782. https://doi.org/10.3390/cryst14090782
Chicago/Turabian StyleKwon, Gi-Hoon, Byoungho Choi, Young-Kook Lee, and Kyoungil Moon. 2024. "Influence of the Acetylene Flow Rate and Process Pressure on the Carbon Deposition Behavior by Thermal Chemical Vapor Deposition Process" Crystals 14, no. 9: 782. https://doi.org/10.3390/cryst14090782