Resonant Tunneling Diodes: Mid-Infrared Sensing at Room Temperature

Rothmayr, Florian; Guarin Castro, Edgar David; Hartmann, Fabian; Knebl, Georg; Schade, Anne; Höfling, Sven; Koeth, Johannes; Pfenning, Andreas; Worschech, Lukas; Lopez-Richard, Victor

doi:10.3390/nano12061024

Open AccessArticle

Resonant Tunneling Diodes: Mid-Infrared Sensing at Room Temperature

by

Florian Rothmayr

^1,2,*

,

Edgar David Guarin Castro

³,

Fabian Hartmann

²,

Georg Knebl

²,

Anne Schade

²,

Sven Höfling

²,

Johannes Koeth

¹,

Andreas Pfenning

^2,4,

Lukas Worschech

² and

Victor Lopez-Richard

³

¹

Nanoplus Nanosystems and Technologies GmbH, Oberer Kirschberg 4, D-97218 Gerbrunn, Germany

²

Technische Physik, Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

³

Departamento de Física, Universidade Federal de São Carlos, São Carlos 13565-905, SP, Brazil

⁴

Stewart Blusson Quantum Matter Institute, University of British Columbia, Vancouver, BC V6T 1Z4, Canada

^*

Author to whom correspondence should be addressed.

Nanomaterials 2022, 12(6), 1024; https://doi.org/10.3390/nano12061024

Submission received: 25 February 2022 / Revised: 16 March 2022 / Accepted: 17 March 2022 / Published: 21 March 2022

(This article belongs to the Special Issue Semiconductor and Nanophotonic Devices)

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Abstract

Resonant tunneling diode photodetectors appear to be promising architectures with a simple design for mid-infrared sensing operations at room temperature. We fabricated resonant tunneling devices with GaInAsSb absorbers that allow operation in the

2 - 4

μm range with significant electrical responsivity of 0.97 A/W at 2004 nm to optical readout. This paper characterizes the photosensor response contrasting different operational regimes and offering a comprehensive theoretical analysis of the main physical ingredients that rule the sensor functionalities and affect its performance. We demonstrate how the drift, accumulation, and escape efficiencies of photogenerated carriers influence the electrostatic modulation of the sensor’s electrical response and how they allow controlling the device’s sensing abilities.

Keywords: resonant tunneling diode; mid-infrared sensing; photosensor

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MDPI and ACS Style

Rothmayr, F.; Guarin Castro, E.D.; Hartmann, F.; Knebl, G.; Schade, A.; Höfling, S.; Koeth, J.; Pfenning, A.; Worschech, L.; Lopez-Richard, V. Resonant Tunneling Diodes: Mid-Infrared Sensing at Room Temperature. Nanomaterials 2022, 12, 1024. https://doi.org/10.3390/nano12061024

AMA Style

Rothmayr F, Guarin Castro ED, Hartmann F, Knebl G, Schade A, Höfling S, Koeth J, Pfenning A, Worschech L, Lopez-Richard V. Resonant Tunneling Diodes: Mid-Infrared Sensing at Room Temperature. Nanomaterials. 2022; 12(6):1024. https://doi.org/10.3390/nano12061024

Chicago/Turabian Style

Rothmayr, Florian, Edgar David Guarin Castro, Fabian Hartmann, Georg Knebl, Anne Schade, Sven Höfling, Johannes Koeth, Andreas Pfenning, Lukas Worschech, and Victor Lopez-Richard. 2022. "Resonant Tunneling Diodes: Mid-Infrared Sensing at Room Temperature" Nanomaterials 12, no. 6: 1024. https://doi.org/10.3390/nano12061024

APA Style

Rothmayr, F., Guarin Castro, E. D., Hartmann, F., Knebl, G., Schade, A., Höfling, S., Koeth, J., Pfenning, A., Worschech, L., & Lopez-Richard, V. (2022). Resonant Tunneling Diodes: Mid-Infrared Sensing at Room Temperature. Nanomaterials, 12(6), 1024. https://doi.org/10.3390/nano12061024

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Resonant Tunneling Diodes: Mid-Infrared Sensing at Room Temperature

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