Simulation of a Steep-Slope p- and n-Type HfS2/MoTe2 Field-Effect Transistor with the Hybrid Transport Mechanism
Abstract
:1. Introduction
2. Computational Methods
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Lyu, J.; Gong, J. Simulation of a Steep-Slope p- and n-Type HfS2/MoTe2 Field-Effect Transistor with the Hybrid Transport Mechanism. Nanomaterials 2023, 13, 649. https://doi.org/10.3390/nano13040649
Lyu J, Gong J. Simulation of a Steep-Slope p- and n-Type HfS2/MoTe2 Field-Effect Transistor with the Hybrid Transport Mechanism. Nanomaterials. 2023; 13(4):649. https://doi.org/10.3390/nano13040649
Chicago/Turabian StyleLyu, Juan, and Jian Gong. 2023. "Simulation of a Steep-Slope p- and n-Type HfS2/MoTe2 Field-Effect Transistor with the Hybrid Transport Mechanism" Nanomaterials 13, no. 4: 649. https://doi.org/10.3390/nano13040649