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10.3390/nano14110969
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Article

Low-Polarization, Broad-Spectrum Semiconductor Optical Amplifiers

by
Meng Zhang
1,2,
Tianyi Zhang
1,3,
Hui Tang
1,2,
Lei Liang
1,2,3,*,
Yongyi Chen
1,3,4,*,
Li Qin
1,2,3,
Yue Song
1,2,3,
Yuxin Lei
1,2,3,
Peng Jia
1,2,3,
Yubing Wang
1,2,3,
Cheng Qiu
1,2,3,
Yuntao Cao
5,
Yongqiang Ning
1,2 and
Lijun Wang
1,2,3
1
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
2
Daheng College, University of Chinese Academy of Sciences, Beijing 100049, China
3
Jilin Changguang Jixin Technology Co., Ltd., No. 206, Software Road, Changchun 130022, China
4
Jlight Semiconductor Technology Co., Ltd., No. 1588, Changde Road, Changchun 130102, China
5
National Key Laboratory of Advanced Vehicle Integration and Control, China FAW Corporation Limited, Changchun 130000, China
*
Authors to whom correspondence should be addressed.
Nanomaterials 2024, 14(11), 969; https://doi.org/10.3390/nano14110969
Submission received: 19 March 2024 / Revised: 11 May 2024 / Accepted: 27 May 2024 / Published: 2 June 2024
(This article belongs to the Section Nanophotonics Materials and Devices)
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Abstract

Polarization-insensitive semiconductor optical amplifiers (SOAs) in all-optical networks can improve the signal-light quality and transmission rate. Herein, to reduce the gain sensitivity to polarization, a multi-quantum-well SOA in the 1550 nm band is designed, simulated, and developed. The active region mainly comprises the quaternary compound InGaAlAs, as differences in the potential barriers and wells of the components cause lattice mismatch. Consequently, a strained quantum well is generated, providing the SOA with gain insensitivity to the polarization state of light. In simulations, the SOA with ridge widths of 4 µm, 5 µm, and 6 µm is investigated. A 3 dB gain bandwidth of >140 nm is achieved with a 4 µm ridge width, whereas a 6 µm ridge width provides more output power and gain. The saturated output power is 150 mW (21.76 dB gain) at an input power of 0 dBm but increases to 233 mW (13.67 dB gain) at an input power of 10 dBm. The polarization sensitivity is <3 dBm at −20 dBm. This design, which achieves low polarization sensitivity, a wide gain bandwidth, and high gain, will be applicable in a wide range of fields following further optimization.
Keywords: semiconductor optical amplifier; gain sensitivity; polarization sensitivity; gain bandwidth; quaternary compound semiconductor optical amplifier; gain sensitivity; polarization sensitivity; gain bandwidth; quaternary compound

Share and Cite

MDPI and ACS Style

Zhang, M.; Zhang, T.; Tang, H.; Liang, L.; Chen, Y.; Qin, L.; Song, Y.; Lei, Y.; Jia, P.; Wang, Y.; et al. Low-Polarization, Broad-Spectrum Semiconductor Optical Amplifiers. Nanomaterials 2024, 14, 969. https://doi.org/10.3390/nano14110969

AMA Style

Zhang M, Zhang T, Tang H, Liang L, Chen Y, Qin L, Song Y, Lei Y, Jia P, Wang Y, et al. Low-Polarization, Broad-Spectrum Semiconductor Optical Amplifiers. Nanomaterials. 2024; 14(11):969. https://doi.org/10.3390/nano14110969

Chicago/Turabian Style

Zhang, Meng, Tianyi Zhang, Hui Tang, Lei Liang, Yongyi Chen, Li Qin, Yue Song, Yuxin Lei, Peng Jia, Yubing Wang, and et al. 2024. "Low-Polarization, Broad-Spectrum Semiconductor Optical Amplifiers" Nanomaterials 14, no. 11: 969. https://doi.org/10.3390/nano14110969

APA Style

Zhang, M., Zhang, T., Tang, H., Liang, L., Chen, Y., Qin, L., Song, Y., Lei, Y., Jia, P., Wang, Y., Qiu, C., Cao, Y., Ning, Y., & Wang, L. (2024). Low-Polarization, Broad-Spectrum Semiconductor Optical Amplifiers. Nanomaterials, 14(11), 969. https://doi.org/10.3390/nano14110969

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