Interfacial Properties of Anisotropic Monolayer SiAs Transistors

Zou, Feihu; Cong, Yao; Song, Weiqi; Liu, Haosong; Li, Yanan; Zhu, Yifan; Zhao, Yue; Pan, Yuanyuan; Li, Qiang

doi:10.3390/nano14030238

Open AccessArticle

Interfacial Properties of Anisotropic Monolayer SiAs Transistors

by

Feihu Zou

^1,†,

Yao Cong

^2,†,

Weiqi Song

¹,

Haosong Liu

²,

Yanan Li

²,

Yifan Zhu

²,

Yue Zhao

¹,

Yuanyuan Pan

^1,*

and

Qiang Li

^1,*

¹

College of Physics, Qingdao University, Qingdao 266071, China

²

State Key Laboratory of Heavy Oil Processing, Institute of New Energy, College of Chemistry and Chemical Engineering, China University of Petroleum (East China), Qingdao 266580, China

^*

Authors to whom correspondence should be addressed.

^†

These authors contributed equally to this work.

Nanomaterials 2024, 14(3), 238; https://doi.org/10.3390/nano14030238

Submission received: 5 January 2024 / Revised: 17 January 2024 / Accepted: 18 January 2024 / Published: 23 January 2024

(This article belongs to the Special Issue First-Principles Investigations of Low-Dimensional Nanomaterials (2nd Edition))

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Abstract

The newly prepared monolayer (ML) SiAs is expected to be a candidate channel material for next-generation nano-electronic devices in virtue of its proper bandgap, high carrier mobility, and anisotropic properties. The interfacial properties in ML SiAs field-effect transistors are comprehensively studied with electrodes (graphene, V₂CO₂, Au, Ag, and Cu) by using ab initio electronic structure calculations and quantum transport simulation. It is found that ML SiAs forms a weak van der Waals interaction with graphene and V₂CO₂, while it forms a strong interaction with bulk metals (Au, Ag, and Cu). Although ML SiAs has strong anisotropy, it is not reflected in the contact property. Based on the quantum transport simulation, ML SiAs forms n-type lateral Schottky contact with Au, Ag, and Cu electrodes with the Schottky barrier height (SBH) of 0.28 (0.27), 0.40 (0.47), and 0.45 (0.33) eV along the a (b) direction, respectively, while it forms p-type lateral Schottky contact with a graphene electrode with a SBH of 0.34 (0.28) eV. Fortunately, ML SiAs forms an ideal Ohmic contact with the V₂CO₂ electrode. This study not only gives a deep understanding of the interfacial properties of ML SiAs with electrodes but also provides a guide for the design of ML SiAs devices.

Keywords: monolayer SiAs; Schottky contact; Ohmic contact; transistors

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MDPI and ACS Style

Zou, F.; Cong, Y.; Song, W.; Liu, H.; Li, Y.; Zhu, Y.; Zhao, Y.; Pan, Y.; Li, Q. Interfacial Properties of Anisotropic Monolayer SiAs Transistors. Nanomaterials 2024, 14, 238. https://doi.org/10.3390/nano14030238

AMA Style

Zou F, Cong Y, Song W, Liu H, Li Y, Zhu Y, Zhao Y, Pan Y, Li Q. Interfacial Properties of Anisotropic Monolayer SiAs Transistors. Nanomaterials. 2024; 14(3):238. https://doi.org/10.3390/nano14030238

Chicago/Turabian Style

Zou, Feihu, Yao Cong, Weiqi Song, Haosong Liu, Yanan Li, Yifan Zhu, Yue Zhao, Yuanyuan Pan, and Qiang Li. 2024. "Interfacial Properties of Anisotropic Monolayer SiAs Transistors" Nanomaterials 14, no. 3: 238. https://doi.org/10.3390/nano14030238

APA Style

Zou, F., Cong, Y., Song, W., Liu, H., Li, Y., Zhu, Y., Zhao, Y., Pan, Y., & Li, Q. (2024). Interfacial Properties of Anisotropic Monolayer SiAs Transistors. Nanomaterials, 14(3), 238. https://doi.org/10.3390/nano14030238

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