Article Versions Notes

Svrcek V, Kolenda M, Kadys A, Reklaitis I, Dobrovolskas D, Malinauskas T, Lozach M, Mariotti D, Strassburg M, Tomašiūnas R. Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage. Nanomaterials. 2018; 8(12):1039. https://doi.org/10.3390/nano8121039

Svrcek, Vladimir, Marek Kolenda, Arunas Kadys, Ignas Reklaitis, Darius Dobrovolskas, Tadas Malinauskas, Mickael Lozach, Davide Mariotti, Martin Strassburg, and Roland Tomašiūnas. 2018. "Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage" Nanomaterials 8, no. 12: 1039. https://doi.org/10.3390/nano8121039

Svrcek, V., Kolenda, M., Kadys, A., Reklaitis, I., Dobrovolskas, D., Malinauskas, T., Lozach, M., Mariotti, D., Strassburg, M., & Tomašiūnas, R. (2018). Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage. Nanomaterials, 8(12), 1039. https://doi.org/10.3390/nano8121039