Heterostructures “Ferroelectric Film/Silicon Carbide” for High Power Microwave Applications
Abstract
:1. Introduction
2. Materials and Methods
- (i)
- According to the recent investigations of initial stages of BST films growth on SiC substrate [38], the mechanism of film growth is determined by a substrate temperature. As it was shown, the heating of the SiC substrate until C leads to the “growth in height”, i.e., formation of high islands without spread of thicknesses, that is due to the mechanism of diffusion of adatoms through the gaseous phase is predominant. The decrease in from 880 to 800 C leads to an increase in the SiC substrate area covered by islands with simultaneous decrease in the island height, which indicate the change in the mechanisms of the mass transfer from the diffusion via a gaseous phase to the surface diffusion, and, hence, the change from the “growth in height” to the “lateral growth”.
- (ii)
- (iii)
- The growth of continuous 300-nm-thick BST films on SiC substrate both at C and 880 C leads to a polycrystalline film formation [36].
- (iv)
- The structure and microwave properties of BST films on the monocrystal substrate can be significantly improved by the multi-step deposition method using the intermediate annealing during the film growth [41], which allows us to correct the lattice defects during the layer deposition.
3. Results
3.1. Structure Characterization of BST Films on SiC
3.2. Small Signal Microwave Characterization of BST Film Capacitors
3.3. High Power Microwave Characterization of BST/SiC Capacitors
4. Discussion
5. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
- Martínez-Viviente, F.L.; Hinojosa, J. 12—Tunable ferroelectrics for frequency agile microwave and THz devices. In Magnetic, Ferroelectric, and Multiferroic Metal Oxides; Stojanovic, B.D., Ed.; Elsevier: Amsterdam, The Netherlands, 2018; pp. 251–264. [Google Scholar] [CrossRef]
- Romanofsky, R.R.; Toonen, R.C. Past, present and future of ferroelectric and multiferroic thin films for array antennas. Multidimens. Syst. Signal Process. 2018, 29, 475–487. [Google Scholar] [CrossRef]
- Nadaud, K.; Borderon, C.; Renoud, R.; Ghalem, A.; Crunteanu, A.; Huitema, L.; Dumas-Bouchiat, F.; Marchet, P.; Champeaux, C.; Gundel, H.W. Diffuse phase transition of BST thin films in the microwave domain. Appl. Phys. Lett. 2018, 112, 262901. [Google Scholar] [CrossRef]
- Dragoman, M.; Aldrigo, M.; Modreanu, M.; Dragoman, D. Extraordinary tunability of high-frequency devices using Hf0.3Zr0.7O2 ferroelectric at very low applied voltages. Appl. Phys. Lett. 2017, 110, 103104. [Google Scholar] [CrossRef] [Green Version]
- Ahmed, A.; Goldthorpe, I.A.; Khandani, A.K. Electrically tunable materials for microwave applications. Appl. Phys. Rev. 2015, 2, 011302. [Google Scholar] [CrossRef]
- Meyers, C.J.G.; Freeze, C.R.; Stemmer, S.; York, R.A. (Ba,Sr)TiO3 tunable capacitors with RF commutation quality factors exceeding 6000. Appl. Phys. Lett. 2016, 109, 112902. [Google Scholar] [CrossRef]
- Meyers, C.J.G.; Freeze, C.R.; Stemmer, S.; York, R.A. Effect of BST film thickness on the performance of tunable interdigital capacitors grown by MBE. Appl. Phys. Lett. 2017, 111, 262903. [Google Scholar] [CrossRef]
- Lai, L.; Xu, Y.; Ren, Y.; Gao, H.; Wang, X.; Zhu, J.; He, Y.; Zhu, X. Low loss and highly tunable (Ba,Sr)(Ti,Mn)O3/(Ba,Sr)TiO3 bilayered films for electrically tunable microwave device applications. J. Mater. Sci. Mater. Electron. 2017, 28, 5718–5724. [Google Scholar] [CrossRef]
- Altynnikov, A.; Gagarin, A.; Tumarkin, A.; Kotel’nikov, I. Characterization of the properties of barium–strontium titanate films and controlled elements based on them in the frequency range of 1–60 GHz. Tech. Phys. Lett. 2019, 45, 540–543. [Google Scholar] [CrossRef]
- Vendik, O.G. Ferroelectrics find their “niche” among microwave control devices. Phys. Solid State 2009, 51, 1529–1534. [Google Scholar] [CrossRef]
- Wang, X.; Bao, P.; Jackson, T.; Lancaster, M. Tunable microwave filters based on discrete ferroelectric and semiconductor varactors. IET Microw. Antennas Propag. 2011, 5, 776–782. [Google Scholar] [CrossRef]
- Ioachim, A.; Toacsan, M.; Banciu, M.; Nedelcu, L.; Vasiliu, F.; Alexandru, H.; Berbecaru, C.; Stoica, G. Barium strontium titanate-based perovskite materials for microwave applications. Prog. Solid State Chem. 2007, 35, 513–520. [Google Scholar] [CrossRef]
- Alexandru, H.; Berbecaru, C.; Ioachim, A.; Toacsen, M.; Banciu, M.; Nedelcu, L.; Ghetu, D. Oxides ferroelectric (Ba, Sr)TiO3 for microwave devices. Mater. Sci. Eng. B 2004, 109, 152–159. [Google Scholar] [CrossRef]
- Ranasingha, O.; Haghzadeh, M.; Armiento, C.; Akyurtlu, A. Formulation and characterization of sinterless Barium Strontium Titanate (BST) nanocomposite dielectric inks for flexible RF and Microwave electronics applications. In APS Meeting Abstracts; APS: Boston, MA, USA, 2019. [Google Scholar]
- Vélu, G.; Houzet, G.; Burgnies, L.; Carru, J.C.; Marteau, A.; Blary, K.; Lippens, D.; Mounaix, P.; Tondusson, M.; Nguéma, E. Electrical characterizations of paraelectric BST thin films up to 1 THz: Realization of microwave phaseshifters. Ferroelectrics 2007, 353, 29–37. [Google Scholar] [CrossRef]
- Banciu, M.G.; Geambasu, D.C.; Nedelcu, L.; Iuga, A.; Chirila, C.; Hrib, L.; Trupina, L.; Furuya, T.; Tani, M.; Pantelica, D.; et al. Millimeter Wave and Terahertz Investigations on Some Dielectric Materials. In Proceedings of the 2018 International Semiconductor Conference (CAS), Sinaia, Romania, 10–12 October 2018; pp. 287–290. [Google Scholar] [CrossRef]
- Karnati, K.K.; Shen, Y.; Trampler, M.E.; Ebadi, S.; Wahid, P.F.; Gong, X. A BST-integrated capacitively loaded patch for Ka- and X-band beamsteerable reflectarray antennas in satellite communications. IEEE Trans. Antennas Propag. 2015, 63, 1324–1333. [Google Scholar] [CrossRef]
- De Paolis, R.; Payan, S.; Maglione, M.; Guegan, G.; Coccetti, F. High-tunability and high-Q-factor integrated ferroelectric circuits up to millimeter waves. IEEE Trans. Microw. Theory Tech. 2015, 63, 2570–2578. [Google Scholar] [CrossRef]
- Velu, G.; Blary, K.; Burgnies, L.; Marteau, A.; Houzet, G.; Lippens, D.; Carru, J. A 360∘ BST phase shifter with moderate bias voltage at 30 GHz. IEEE Trans. Microw. Theory Tech. 2007, 55, 438–444. [Google Scholar] [CrossRef]
- Yu, M. Power-handling capability for RF filters. IEEE Microw. Mag. 2007, 8, 88–97. [Google Scholar] [CrossRef]
- Dussopt, L.; Rebeiz, G.M. Intermodulation distortion and power handling in RF MEMS switches, varactors, and tunable filters. IEEE Trans. Microw. Theory Tech. 2003, 51, 1247–1256. [Google Scholar] [CrossRef]
- Kienemund, D.; Kohler, C.; Fink, T.; Abrecht, M.; Wiens, A.; Bigler, W.; Binder, J.R.; Maune, H.; Jakoby, R. A fully-printed MIM varactor for high power application. In Proceedings of the 2016 46th European Microwave Conference (EuMC), London, UK, 4–6 October 2016; pp. 623–626. [Google Scholar] [CrossRef]
- Maune, H.; Kienemund, D.; Wiens, A.; Preis, S.; Schuster, C.; Walk, D.; Bengtsson, O.; Jakoby, R. Ferroelectrics for Tunable High-Power Applications. In Proceedings of the 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), Ann Arbor, MI, USA, 16–18 July 2018; pp. 1–3. [Google Scholar] [CrossRef]
- York, R.A. Circuit Configuration for DC-Biased Capacitors. U.S. Patent 6,674,321, 6 January 2004. [Google Scholar]
- Fu, J.S.; Zhu, X.A.; Chen, D.Y.; Phillips, J.D.; Mortazawi, A. A linearity improvement technique for thin-film barium strontium titanate capacitors. In Proceedings of the 2006 IEEE MTT-S International Microwave Symposium Digest, San Francisco, CA, USA, 11–16 June 2006; pp. 560–563. [Google Scholar]
- Kozyrev, A.; Ivanov, A.; Samoilova, T.; Soldatenkov, O.; Astafiev, K.; Sengupta, L.C. Nonlinear response and power handling capability of ferroelectric BaxSr1−xTiO3 film capacitors and tunable microwave devices. J. Appl. Phys. 2000, 88, 5334–5342. [Google Scholar] [CrossRef]
- Soldatenkov, O.; Samoilova, T.; Ivanov, A.; Kozyrev, A.; Ginley, D.; Kaydanova, T. Nonlinear properties of thin ferroelectric film-based capacitors at elevated microwave power. Appl. Phys. Lett. 2006, 89, 232901. [Google Scholar] [CrossRef]
- Tumarkin, A.; Razumov, S.; Gagarin, A.; Altynnikov, A.; Mikhailov, A.; Platonov, R.; Kotelnikov, I.; Kozyrev, A.; Butler, J.E. Ferroelectric varactor on diamond for elevated power microwave applications. IEEE Electron Device Lett. 2016, 37, 762–765. [Google Scholar] [CrossRef]
- Tumarkin, A.; Razumov, S.; Gagarin, A.; Altynnikov, A.; Mikhailov, A.; Platonov, R.; Kotelnikov, I.; Kozyrev, A.; Butler, J. Thin film ferroelectric structures on diamond for high power microwave applications. Diam. Relat. Mater. 2017, 75, 176–180. [Google Scholar] [CrossRef]
- Levinshtein, M.E.; Rumyantsev, S.L.; Shur, M.S. Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe; John Wiley & Sons: Hoboken, NJ, USA, 2001. [Google Scholar]
- Clarke, R.C.; Palmour, J.W. SiC microwave power technologies. Proc. IEEE 2002, 90, 987–992. [Google Scholar] [CrossRef]
- Lee, J.S.; Jo, Y.D.; Koh, J.H.; Ha, J.G.; Koo, S.M. Crystalline and electrical properties of BST/4H-SiC capacitors. J. Korean Phys. Soc. 2010, 57, 1889–1892. [Google Scholar] [CrossRef]
- Song, L.; Chen, Y.; Wang, G.; Yang, L.; Ge, J.; Dong, X.; Xiang, P.; Zhang, Y.; Tang, X. Fabrication and dielectric properties of Ba0.63Sr0.37TiO3 thin films on SiC substrates. J. Am. Ceram. Soc. 2014, 97, 3048–3051. [Google Scholar] [CrossRef]
- Östling, M.; Koo, S.M.; Zetterling, C.M.; Khartsev, S.; Grishin, A. Ferroelectric thin films on silicon carbide for next-generation nonvolatile memory and sensor devices. Thin Solid Films 2004, 469–470, 444–449. [Google Scholar] [CrossRef]
- Tumarkin, A.V.; Razumov, S.V.; Gagarin, A.G.; Odinets, A.A.; Mikhailov, A.K.; Pronin, I.P.; Stozharov, V.M.; Senkevich, S.V.; Travin, N.K. Ferroelectric films of barium strontium titanate on semi-insulating silicon carbide substrates. Tech. Phys. Lett. 2016, 42, 423–426. [Google Scholar] [CrossRef]
- Tumarkin, A.; Gagarin, A.; Odinets, A.; Zlygostov, M.; Sapego, E.; Kotelnikov, I. Structural and microwave characterization of BaSrTiO3 thin films deposited on semi-insulating silicon carbide. Jpn. J. Appl. Phys. 2018, 57, 11UE02. [Google Scholar] [CrossRef]
- Parshin, V.; Serov, E.; Denisov, G.; Garin, B.; Denisyuk, R.; V’yuginov, V.; Klevtsov, V.; Travin, N. Silicon carbide for high-power applications at MM and THz ranges. Diam. Relat. Mater. 2017, 80, 1–4. [Google Scholar] [CrossRef]
- Tumarkin, A.V.; Serenkov, I.T.; Sakharov, V.I.; Razumov, S.V.; Odinets, A.A.; Zlygostov, M.V.; Sapego, E.N.; Afrosimov, V.V. Initial stages of the growth of barium strontium titanate films on a semi-isolating silicon carbide substrate. Phys. Solid State 2017, 59, 2374–2380. [Google Scholar] [CrossRef]
- Kukushkin, S.; Sakalo, T. Diffusional coalescence of island films on the real crystal surface in the case of layer-by-layer growth of islands—II. An open system. Undamped sources of deposited atoms. Acta Metall. Mater. 1993, 41, 1243–1244. [Google Scholar] [CrossRef]
- Kukushkin, S.; Osipov, A.; Bessolov, V.; Konenkova, E.; Panteleev, V. Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates. Phys. Solid State 2017, 59, 674–681. [Google Scholar] [CrossRef]
- Tumarkin, A.; Razumov, S.; Odinets, A.; Gagarin, A.; Altynnikov, A.; Kozyrev, A. Ferroelectric BaSrTiO3 films structured by an intermediate annealing during the deposition. Integr. Ferroelectr. 2016, 173, 38–45. [Google Scholar] [CrossRef]
Ref. | Substrate | Dissipated Power Density, W/mm | Overheating, K | Tunability | Q-Factor |
---|---|---|---|---|---|
[28] | AlO | 10 | 20 | 2 | 40 |
[28] | diamond | 10 | 2 | 1.2 | 30 |
[22,23] | AlO | 100 | 10 | 1.8 | 25 |
[23] | AlN | 130 | 10 | not available | not available |
this work | SiC | 125 | not observed | 2.4 | 45 |
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Tumarkin, A.; Gagarin, A.; Zlygostov, M.; Sapego, E.; Altynnikov, A. Heterostructures “Ferroelectric Film/Silicon Carbide” for High Power Microwave Applications. Coatings 2020, 10, 247. https://doi.org/10.3390/coatings10030247
Tumarkin A, Gagarin A, Zlygostov M, Sapego E, Altynnikov A. Heterostructures “Ferroelectric Film/Silicon Carbide” for High Power Microwave Applications. Coatings. 2020; 10(3):247. https://doi.org/10.3390/coatings10030247
Chicago/Turabian StyleTumarkin, Andrey, Alexander Gagarin, Michail Zlygostov, Evgeny Sapego, and Andrey Altynnikov. 2020. "Heterostructures “Ferroelectric Film/Silicon Carbide” for High Power Microwave Applications" Coatings 10, no. 3: 247. https://doi.org/10.3390/coatings10030247