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Volume 14
Issue 7
10.3390/coatings14070911
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This is an early access version, the complete PDF, HTML, and XML versions will be available soon.
Article

High-Quality 4H-SiC Homogeneous Epitaxy via Homemade Horizontal Hot-Wall Reactor

by
Xiaoliang Gong
1,2,
Tianle Xie
2,
Fan Hu
2,
Ping Li
2,
Sai Ba
2,
Liancheng Wang
1 and
Wenhui Zhu
1,*
1
State Key Laboratory of Precision Manufacturing for Extreme Service Performance, College of Mechanical and Electrical Engineering, Central South University, Changsha 410083, China
2
Changsha Semiconductor Process Equipment Institute, Changsha 410114, China
*
Author to whom correspondence should be addressed.
Coatings 2024, 14(7), 911; https://doi.org/10.3390/coatings14070911 (registering DOI)
Submission received: 31 May 2024 / Revised: 6 July 2024 / Accepted: 16 July 2024 / Published: 20 July 2024
(This article belongs to the Special Issue Advanced Surface Technology and Application)
Versions Notes

Abstract

Abstract: In this paper, using a self-developed silicon carbide epitaxial reactor, we obtained high-quality 6-inch epitaxial wafers with doping concentration uniformity less than 2%, thickness uniformity less than 1% and roughness less than 0.2 nm on domestic substrates, which meets the application requirements of high-quality Schottky Barrier Diode (SBD) and Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) devices. We found that increasing the carrier gas flow rate can minimize source gas depletion and optimize the doping uniformity of the 6-inch epitaxial wafer from over 5% to less than 2%. Moreover, reducing the C/Si ratio significantly can suppress the “two-dimensional nucleation growth mode” and improve the wafer surface roughness Ra from 1.82 nm to 0.16 nm.
Keywords: silicon carbide homoepitaxy; nitrogen doping; horizontal hot-wall reactor silicon carbide homoepitaxy; nitrogen doping; horizontal hot-wall reactor

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MDPI and ACS Style

Gong, X.; Xie, T.; Hu, F.; Li, P.; Ba, S.; Wang, L.; Zhu, W. High-Quality 4H-SiC Homogeneous Epitaxy via Homemade Horizontal Hot-Wall Reactor. Coatings 2024, 14, 911. https://doi.org/10.3390/coatings14070911

AMA Style

Gong X, Xie T, Hu F, Li P, Ba S, Wang L, Zhu W. High-Quality 4H-SiC Homogeneous Epitaxy via Homemade Horizontal Hot-Wall Reactor. Coatings. 2024; 14(7):911. https://doi.org/10.3390/coatings14070911

Chicago/Turabian Style

Gong, Xiaoliang, Tianle Xie, Fan Hu, Ping Li, Sai Ba, Liancheng Wang, and Wenhui Zhu. 2024. "High-Quality 4H-SiC Homogeneous Epitaxy via Homemade Horizontal Hot-Wall Reactor" Coatings 14, no. 7: 911. https://doi.org/10.3390/coatings14070911

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