High-Performance UV–Visible Broad Spectral Phototransistors Based on CuPc/Cs3Bi2I9 Heterojunction

Wang, Yurui; Jiang, Benfu; Zhao, Xijun; Chen, Yuxing; Pan, Xinxin; Yu, Qing; Yao, Bo

doi:10.3390/coatings14080966

Open AccessArticle

High-Performance UV–Visible Broad Spectral Phototransistors Based on CuPc/Cs₃Bi₂I₉ Heterojunction

by

Yurui Wang

^1,2,

Benfu Jiang

¹,

Xijun Zhao

³,

Yuxing Chen

²,

Xinxin Pan

^1,*,

Qing Yu

⁴ and

Bo Yao

^2,*

¹

School of Electronic and Information Engineering, Zhuhai College of Science and Technology, Zhuhai 519041, China

²

Zhejiang Engineering Research Center of MEMS, Shaoxing University, Shaoxing 312000, China

³

Zhuhai South Integrated Circuit Design Center, Zhuhai 519041, China

⁴

United Nova Technology Co., Ltd., Shaoxing 312000, China

^*

Authors to whom correspondence should be addressed.

Coatings 2024, 14(8), 966; https://doi.org/10.3390/coatings14080966

Submission received: 30 May 2024 / Revised: 28 July 2024 / Accepted: 30 July 2024 / Published: 2 August 2024

(This article belongs to the Special Issue Vacuum Deposition Technologies and Semiconductor Applications)

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Abstract

Phototransistors are three-terminal photodetectors that usually have a higher photocurrent gain than photodiodes due to the amplification of the gate electrode. In this work, a broad spectral phototransistor based on copper phthalocyanine (CuPc) and a Cs₃Bi₂I₉ (CBI) heterojunction is fabricated by the full vacuum evaporation method. Due to the complementary UV–visible absorption of CuPc and CBI, the device exhibits superior performance under three different types of visible light illumination. The experimental results show that the structure of the organic/perovskite heterojunction active layer has the characteristics of good compatibility and a simple process. Meanwhile, by utilizing the superior light-absorption characteristics of perovskite materials and the strong exciton dissociation efficiency of a hetero-type heterojunction interface, the CuPc/CBI-PT exhibits a higher photoresponsivity, photosensitivity, specific detection rate, and lower operating voltage than the CuPc reference device. The stability test shows that the CuPc/CBI-PT can still obtain a 0.73 A/W photoresponsivity under 660 nm light illumination after being stored in the air for 360 h without any packaging. This indicates that the organic/perovskite heterojunction PT may be a good choice for the preparation of high-performance photodetectors.

Keywords: Cs₃Bi₂I₉; planar heterojunction; phototransistor; broad spectral; stability

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MDPI and ACS Style

Wang, Y.; Jiang, B.; Zhao, X.; Chen, Y.; Pan, X.; Yu, Q.; Yao, B. High-Performance UV–Visible Broad Spectral Phototransistors Based on CuPc/Cs₃Bi₂I₉ Heterojunction. Coatings 2024, 14, 966. https://doi.org/10.3390/coatings14080966

AMA Style

Wang Y, Jiang B, Zhao X, Chen Y, Pan X, Yu Q, Yao B. High-Performance UV–Visible Broad Spectral Phototransistors Based on CuPc/Cs₃Bi₂I₉ Heterojunction. Coatings. 2024; 14(8):966. https://doi.org/10.3390/coatings14080966

Chicago/Turabian Style

Wang, Yurui, Benfu Jiang, Xijun Zhao, Yuxing Chen, Xinxin Pan, Qing Yu, and Bo Yao. 2024. "High-Performance UV–Visible Broad Spectral Phototransistors Based on CuPc/Cs₃Bi₂I₉ Heterojunction" Coatings 14, no. 8: 966. https://doi.org/10.3390/coatings14080966

APA Style

Wang, Y., Jiang, B., Zhao, X., Chen, Y., Pan, X., Yu, Q., & Yao, B. (2024). High-Performance UV–Visible Broad Spectral Phototransistors Based on CuPc/Cs₃Bi₂I₉ Heterojunction. Coatings, 14(8), 966. https://doi.org/10.3390/coatings14080966

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High-Performance UV–Visible Broad Spectral Phototransistors Based on CuPc/Cs₃Bi₂I₉ Heterojunction

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