Advances in La-Based High-k Dielectrics for MOS Applications
Abstract
:1. Introduction
2. Characteristics of La-Based High-k Dielectrics
2.1. Hygroscopicity of La2O3
2.2. Defects in La2O3
2.3. Effects of La on La-doped Ternary Oxides
3. Applications of La-based High-k Gate Dielectrics
3.1. Nonvolatile Memory
3.2. Metal-oxide-semiconductor Field-effect Transistors (MOSFETs)
3.3. Thin-film Transistors (TFTs)
3.4. Ge and III-V Metal-oxide-semiconductor (MOS) Devices
3.5. Other Novel Metal-oxide-semiconductor (MOS) Devices
4. Conclusions and Future Prospects
Author Contributions
Funding
Conflicts of Interest
References
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Gate Length (nm) | 22 | 16 | 11 | 8 |
Dielectric thickness (nm) | 0.8 | 0.6 | 0.4 | 0.3 |
Junction depth (nm) | 11.0 | 8.0 | 5.5 | 4.0 |
Channel depletion thickness (nm) | 11.0 | 8.0 | 5.5 | 4.0 |
Dielectric | Deposition | Annealing | EOT (nm) | μeff, max (cm2/Vs) | |Vth| (V) | SS (mV/dec) |
---|---|---|---|---|---|---|
La2O3/LaSiO [92] | E-Beam | 500 °C, 30 min | 1.15 | 300 | 0.4 | 66 |
LaAlO3 [97] | Sputtering | 700 °C, 30 s | 1.73 | 213 | ~0.05 | 69 |
HfLaO [99] | Sputtering | 900 °C, 30 s | 1.3 | 225 | ~0.05 | − |
HfLaSiO [100] | PVD | 850 °C, 1 min | 1.2 | 160 | − | − |
LaYO [101] | E-Beam | 600 °C, 5 min | 1.7 | 181 | 0.59 | 95 |
LaZrO [102] | ALD | 500 °C, 5 min | 1.27 | − | 0.43 | 71 |
LaTiO [103] | PVD | 600 °C | 0.63 | 300 | 0.12 | − |
Dielectrics | La2O3 [114] | HfLaO [114] | TaLaO [115] | NbLaO [42] | ZrLaO [116] | LaAlO3 [117] |
---|---|---|---|---|---|---|
µsat(cm2·V−1·s−1) | 16.6 | 35.1 | 23.4 | 28.0 | 67.2 | 5.4 |
Vth (V) | 2.14 | 3.3 | 2.4 | 1.84 | 2.59 | 0.29 |
Hysteresis (V) | −0.61 | −0.03 | 0.1 | −0.07 | −0.56 | − |
Ion/Ioff (107) | 1.7 | 0.51 | 2.6 | 3.6 | 0.11 | 0.011 |
SS (mV/dec) | 210 | 206 | 177 | 170 | 240 | 98 |
Cox (µF/cm2) | 0.21 | 0.24 | 0.262 | 0.26 | − | 0.23 |
k | 8.5 | 10.9 | 11.8 | 10.1 | 8.9 | 10.4 |
RMS (nm) | 0.96 | − | 0.51 | 0.24 | 0.82 | − |
Dielectrics | La2O3 [118] | HfLaO [119] | HfLaON [120] | ZrLaO [121] | TaLaO [41] | LaYO [118] | NbLaO [122] |
---|---|---|---|---|---|---|---|
µsat(cm2·V−1·s−1) | 0.091 | 0.71 | 0.71 | 0.72 | 1.21 | 0.33 | 1.14 |
Vth (V) | −2.51 | −1.3 | −0.69 | 0.97 | 2.66 | −2.45 | −1.35 |
Ion/Ioff (104) | 0.87 | 10 | 1.99 | 0.96 | 3.21 | 0.24 | 29 |
SS (V/dec) | 476 | 78 | 427 | 578 | 339 | 646 | 208 |
Cox (µF/cm2) | 0.223 | 0.95 | 0.297 | 0.236 | 0.234 | 0.222 | 0.222 |
k | 7.54 | 21.7 | 11.5 | 10.6 | 10.9 | 8.46 | 10.8 |
RMS (nm) | 0.96 | − | 0.138 | − | 0.357 | − | 0.326 |
Dielectric | La2O3 [56] | ZrO2 [127] | LaON [128] | HfO2 [129] | LaTiON [130] | HfTiON [131] | HfO2 [132] |
---|---|---|---|---|---|---|---|
IPL | − | La2O3 | − | LaON | − | LaTaON | TaON/LaON |
Deposition | E-beam | ALD | Sputtering | Sputtering | Sputtering | Sputtering | Sputtering |
Tox (nm) | 5.5 | 7.5 | 8 | 10 | 8 | 7 | 8 |
k | − | 14.7 | 18.8 | 19.2 | 24.6 | 27.7 | 20.9 |
Jg (A/cm2) at VFB+/−1 V | 1 × 10−4 | − | 2.89 × 10−4 | 5.53 × 10−4 | 2.2 × 10−3 | 7.8 × 10−4 | 1.77 × 10−4 |
CET (nm) | − | 1.92 | − | 2.0 | 1.2 | 1.1 | 1.49 |
Dit (cm−2·ev−1) | 8 × 1011 | 1.2 × 1012 | 4.96 × 1011 | 4.2 × 1011 | 3.1 × 1011 | 7.8 × 1011 | 5.32 × 1011 |
Dielectric | La2O3 [136] | LaYO [137] | LaAlO3 [138] | LaLuO3 [139] | TaYON [140] | ZrON [141] | NbAlON [142] | LaTiON [143] |
---|---|---|---|---|---|---|---|---|
IPL | Si | − | − | − | LaTaON | LaGeON | LaAlON | LaON |
Deposition | Sputtering | ALD | MBD | ALD | Sputtering | Sputtering | Sputtering | Sputtering |
Tox (nm) | 15 | 14 | 10 | 12 | 10 | 10 | 10 | 10 |
k | 7.5 | 22 | 6.8 | 25 | 22.9 | 12.7 | 25.5 | 25.3 |
Jg (A/cm2) at VFB+/−1 V | 1.2 × 10−5 | − | 8 × 10−8 | − | 1.3 × 10−5 | 3.8 × 10−5 | 6.2 × 10−6 | 2.3 × 10−5 |
CET (nm) | 7.8 | 2.48 | 5.73 | 1.87 | 1.71 | 3.07 | 1.48 | 1.54 |
Hysteresis (mV) | 260 | − | 30 | − | 35 | 30 | 45 | − |
Dit (cm−2·ev−1) | 1.2 × 1012 | 5 × 1011 | 5 × 1010 | 7 × 1011 | 9 × 1011 | 1.2 × 1012 | 7 × 1011 | 1.05 × 1012 |
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Liu, L.N.; Tang, W.M.; Lai, P.T. Advances in La-Based High-k Dielectrics for MOS Applications. Coatings 2019, 9, 217. https://doi.org/10.3390/coatings9040217
Liu LN, Tang WM, Lai PT. Advances in La-Based High-k Dielectrics for MOS Applications. Coatings. 2019; 9(4):217. https://doi.org/10.3390/coatings9040217
Chicago/Turabian StyleLiu, L. N., W. M. Tang, and P. T. Lai. 2019. "Advances in La-Based High-k Dielectrics for MOS Applications" Coatings 9, no. 4: 217. https://doi.org/10.3390/coatings9040217