Stabilizing of Mechanical Property of Amorphous In−Zn−O Thin Films with Hydrogen Flow
Round 1
Reviewer 1 Report
The manuscript seems to be interesting. However, it could be better presented and described. Other suggestions Authors can find in the attached file.
Comments for author File: 
Comments.pdf
Author Response
Thank you for your kind reviewing. We revised the manuscript and added references as following your comments. Please find the attached revised manuscript and response to review.
Author Response File: Author Response.pdf
Reviewer 2 Report
1. The presentation structure and contents of this manuscript is very similar to the authors’ previous publication except the material of In-Zn-O. Previous publication: Effect of hydrogen on mechanical stability of amorphous In–Sn–O thin films for flexible electronics, Thin Solid Films, 669 (2019) 275–280.
2. Line 79, The residual stress of the films was estimated by the expression of 1/6R [E_S/(1-ν_S)](S^2/f). The author should cite the reference which reported the expression originally, instead of reference [12].
3. To estimate the residual stress, the authors employ the expression of 1/6R [E_S/(1-ν_S)](S^2/f). And the results of the residual stress for the hydrogen flow rates are illustrated in Fig. 4(b). The values of f (thickness of the film), S (thickness of the substrate), ES (Young’s modulus of the substrate), and νS (Poisson’s ratio of the substrate) to calculate the residual stress should be depict in the manuscript. In addition, the values of R (radius of curvature of the substrate) for the hydrogen flow rates should be given as well.
4. In line 127, the authors stated that the calculated values of the residual stress are the negative values. However, the results given in Figure 4(b) are positive values. Both conflict.
5. Line 137-139, “In general, the mechanical stability of the thin films depends on defects such as vacancies and impurities, which in turn affect the subgap state.” Why does the mechanical stability of the thin films depend on vacancies and impurities? Is there direct relation between the mechanical stability and defects? Is there any evidence? Please elaborate.
6. Line 139-141, “……, because hydrogen acts as a defect healer to suppress subgap state defects.” Is there any evidence or result showing that the suppression of subgap state defects for the incorporation of hydrogen in the films?
7. Line 141-142, “Thus, appropriate hydrogen flow during deposition can improve the mechanical stability by suppressing the subgap state defects, to thereby decrease vacancies and impurities.” Is there any evidence or result showing that the decrease in vacancies and impurities in the films for the appropriate flow rates?
8. Line 18-19, “The subgap absorption near 3.1 eV also decreased with increasing hydrogen flow rates.”
Line 135-137, “There was a noticeable difference in the absorption coefficient (α); IZO deposited with a hydrogen flow rate of 0.4% showed the lowest α at ~400 nm (~3.1 eV), ….”
How to interpret these descriptions? Please clarify.
9. In Fig. 5(b), the absorption coefficients for the wavelengths from 2nm to 4nm are presented. Is this plot meaningful? Are these results correct? In addition, no description is given in the text to explain Fig. 5(b).
10. Line 145-147, “(a) transmittance and (b) absorption coefficients (α) calculated from the measured transmittance and reflectance spectra, respectively”
How the absorption coefficients are determined? Please clarify.
Author Response
Thank you for your kind reviewing. We revised the manuscript and added references as following your comments.
Author Response File: Author Response.pdf
Round 2
Reviewer 1 Report
After the revision manuscript is ready for publication.
Reviewer 2 Report
The scale of Y-axis for Figure 4 (b) should be reversed.
