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Journal: Electronics, 2021
Volume: 10
Number: 46

Article: The Characteristics of 6-Inch GaN on Si RF HEMT with High Isolation Composited Buffer Layer Design
Authors: by Chong-Rong Huang, Chia-Hao Liu, Hsiang-Chun Wang, Hsuan-Ling Kao, Hsien-Chin Chiu, Chih-Tien Chen and Kuo-Jen Chang
Link: https://www.mdpi.com/2079-9292/10/1/46

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