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Article

High Power Density, High-Voltage Parallel Resonant Converter Using Parasitic Capacitance on the Secondary Side of a Transformer

Department of Electrical and Biomedical Engineering, Hanyang University, Seoul 04763, Korea
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Author to whom correspondence should be addressed.
Electronics 2021, 10(14), 1736; https://doi.org/10.3390/electronics10141736
Submission received: 14 June 2021 / Revised: 9 July 2021 / Accepted: 9 July 2021 / Published: 19 July 2021

Abstract

High-voltage DC power supplies are used in several applications, including X-ray, plasma, electrostatic precipitator, and capacitor charging. However, such a high-voltage power supply has problems, such as a decrease in reliability, owing to an increase in output ripple voltage, and a decrease in power density, owing to an increase in volume. Therefore, this study proposes a method for improving the power density of a parallel resonant converter using the parasitic capacitor of the secondary side of the transformer. Due to the fact that high-voltage power supplies have many turns on the secondary side, a significant number of parasitic capacitors are generated. In addition, in the case of a parallel resonant converter, because the transformer and the primary resonant capacitor are connected in parallel, the parasitic capacitor component generated on the secondary side of the transformer can be equalized and used. A parallel cap-less resonant converter structure developed using the parasitic components of such transformers is proposed. Primary side and secondary side equivalent model analyses are conducted in order to derive new equations and gain waveforms. Finally, the validity of the proposed structure is verified experimentally.
Keywords: cap-less parallel resonant converter; high power density; high-voltage power supply; parasitic capacitance; equivalent model analysis cap-less parallel resonant converter; high power density; high-voltage power supply; parasitic capacitance; equivalent model analysis

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MDPI and ACS Style

Kwon, J.; Kim, R.-Y. High Power Density, High-Voltage Parallel Resonant Converter Using Parasitic Capacitance on the Secondary Side of a Transformer. Electronics 2021, 10, 1736. https://doi.org/10.3390/electronics10141736

AMA Style

Kwon J, Kim R-Y. High Power Density, High-Voltage Parallel Resonant Converter Using Parasitic Capacitance on the Secondary Side of a Transformer. Electronics. 2021; 10(14):1736. https://doi.org/10.3390/electronics10141736

Chicago/Turabian Style

Kwon, Jaean, and Rae-Young Kim. 2021. "High Power Density, High-Voltage Parallel Resonant Converter Using Parasitic Capacitance on the Secondary Side of a Transformer" Electronics 10, no. 14: 1736. https://doi.org/10.3390/electronics10141736

APA Style

Kwon, J., & Kim, R.-Y. (2021). High Power Density, High-Voltage Parallel Resonant Converter Using Parasitic Capacitance on the Secondary Side of a Transformer. Electronics, 10(14), 1736. https://doi.org/10.3390/electronics10141736

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