High Power Density, High-Voltage Parallel Resonant Converter Using Parasitic Capacitance on the Secondary Side of a Transformer
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Kwon, J.; Kim, R.-Y. High Power Density, High-Voltage Parallel Resonant Converter Using Parasitic Capacitance on the Secondary Side of a Transformer. Electronics 2021, 10, 1736. https://doi.org/10.3390/electronics10141736
Kwon J, Kim R-Y. High Power Density, High-Voltage Parallel Resonant Converter Using Parasitic Capacitance on the Secondary Side of a Transformer. Electronics. 2021; 10(14):1736. https://doi.org/10.3390/electronics10141736
Chicago/Turabian StyleKwon, Jaean, and Rae-Young Kim. 2021. "High Power Density, High-Voltage Parallel Resonant Converter Using Parasitic Capacitance on the Secondary Side of a Transformer" Electronics 10, no. 14: 1736. https://doi.org/10.3390/electronics10141736
APA StyleKwon, J., & Kim, R.-Y. (2021). High Power Density, High-Voltage Parallel Resonant Converter Using Parasitic Capacitance on the Secondary Side of a Transformer. Electronics, 10(14), 1736. https://doi.org/10.3390/electronics10141736