Dependence of Irradiated High-Power Electromagnetic Waves on the Failure Threshold Time of Semiconductors Using a Closed Waveguide

Round 1

Reviewer 1 Report

In this paper, the authors have proposed closed waveguide to solve the failure threshold time of semiconductors caused by the impact of irradiated high power electromagnetic waves. The study is very interesting. However, several concerns in the current stage of manuscript need to be addressed before consideration of acceptance, as follows:

 

To make the manuscript self-contained and more readable, make sure all the variables have been fully specified after each equation.

There are massive literatures on the electromagnetic forward problem computation via the FEM. For examples, the A-V Galerkins equations is the main governing theory on the EM eddy current computations. Lots of approaches have been proposed and believed has its novelty since it has improved the performance of the eddy current computations based on the Galerkin equations. E.g., the conjugate gradients squared (CGS) method with an optimized initial guess-the final solution from the previous frequency can significantly speed up the convergence of the CGS solving process particularly the multi-frequency mode.

Please add more discussion and limitations of the proposed method.

More discussions and literatures should be added in the introduction.

Is there any other limitation of the proposed idea? Such as the specific or limited ranges of working environment or conditions? Is the proposed architecture still valid under other environment?

Carefully recheck grammar and typo errors.

Author Response

Feedback on Reviewer #1 comment

Dear Reviewer #1

First of all, I sincerely appreciate your comment.

I have carefully checked your review comments.

As you mentioned, A-V Galerkin's equations are mathematical theories optimized for modeling EM eddy currents. It is widely known as Finite Element Methods (FEM) along with FDTD (Finite Difference Time Domain) method when performing computational simulation.

However, eddy currents are specialized electric fields which are generated in the presence of a magnetic field and are often seen as a secondary field. An eddy current can be produced by both electromagnets and permanent magnets, as well as transformers and by the relative motion generated when a magnet is located next to a conducting material. eddy currents are used in specific applications, including non-destructive testing, which are discussed.

In general, when applying the eddy current mechanism to the HPEM or EMP effect analysis in the field of defense, it can be applied when analyzing the following mechanisms along with the conjugate gradients squared (CGS) method.

The transfer process of EMP at the semiconducting component level can be explained based on three layer structures (air, dielectric, and conductor layers).The theoretically absorbed energy can be predicted by the complex reflection coefficient. The main failure mechanisms of semiconductor components are also described based on the Joule heating energy generated by the coupling between materials and the applied EMP. Breakdown of the P-N junction, burnout of the circuit pattern in the semiconductor chip, and damage to connecting wires between the lead frame and semiconducting chips can result from dielectric heating and eddy current loss due to electric and magnetic fields. To summarize, the EMP transferred to the semiconductor components interact with the chip material in a semiconductor, and dipolar polarization and ionic conduction happen at the same time. Destruction of the P-N junction can result from excessive reverse voltage. Further EMP research at the semiconducting component level is needed to improve the reliability and susceptibility of electric and electronic systems.

Already a related international SCI journal, I was published online in the Journal of Electromagnetic Waves and Applications in June 2017 as the first author of mine. (A PDF file is attached.)

Sun-Hong Min et al. "Effects on electronics exposed to high-power microwaves on the basis of a relativistic backwardwave oscillator operating on the X-band", Journal of Electromagnetic Waves and Applications

https://doi.org/10.1080/09205071.2017.1354728

However, the manuscript I submitted this time is an experimental paper approached in a different way than the one you mentioned, and it is in a different field from the comment you mentioned.

 

In order to develop information equipment protection technology according to the occurrence of high-output transient electromagnetic waves, research on the effects of information equipment according to the occurrence of high-output transient electromagnetic waves should be preceded. In this study, first of all, PT61000-1-5 (High power electromagnetic (HPEM) effects on civilian systems), PT61000-2-13 (High power electromagnetic (HPEM) environment - radiated and conducted), PT61000-4-33 (Methods and means of measurements of high power transient parameters) were analyzed, and related academic papers were collected and the research results and research trends were analyzed. In addition, the principles, types (Vircator, MILO, Relativistic Magnetron, Relativistic Klystron, Magnetron, TWT, etc.) and characteristics of various HPEM devices, as well as R&D status, as well as various damage cases caused by high-power transient electromagnetic waves generated by HPEM devices were investigated. In addition, basic principle analysis of EMP junction failure threshold of semiconductors by HPEM, threshold voltage calculation research analysis, and recent research trends were conducted.

In order to analyze the effect of destruction by the Electric field of semiconductor parts based on this preliminary information survey, a simulation experiment was performed using a magnetron that generates an electromagnetic wave with an output of 1 kW at a frequency of 2.45 GHz possessed by this laboratory. Unlike previous studies, for accurate experimental reproducibility and precise electric field measurement and control, a closed waveguide was used to measure the threshold electric field affecting semiconductor devices, and data were collected and analyzed. This study will provide basic data for the development of HPEM simulator and protection technology for information equipment caused by high-power transient electromagnetic waves.

 

So, I conducted research and experiments in the following procedure to write a manuscript as follows, and obtained experimental results.

1. Matters performed for writing the manuscript

(1) Completion of analysis of devices that generate high-power transient electromagnetic waves and analysis of generation theory

(2) Completion of data collection on the characteristics of the generated transient electromagnetic waves

(3) Completion of identification of international standard technology trends

(4) Investigation and analysis of high-power transient electromagnetic wave (HPEM) related data (IEC TC77C and related papers) completed

(5) Simulation of the effect on the received signal of information equipment

(6) Effect simulation and destruction data acquisition and analysis of high output transient electromagnetic wave output of 2.45GHz

2. Experimental findings

(1) High-power transient electromagnetic wave (HPEM) preliminary investigation

Research on IEC TC77C, a technical document related to high-power transient electromagnetic waves (HPEM), and other related papers - Investigation of various damage cases caused by various electromagnetic waves (Ultra Wideband (UWB), Short Pulse, Narrow Band, High Power Microwave (HPM)) emitted by HPEM devices

Investigation of basic structure, history, and development status of HPEM generator

Types of HPEM generators (Vircator, MILO, Relativistic Magnetron, Relativistic Klystron, Magnetron, TWT, etc.) Working principle, research and development trends in countries around the world

Investigation of current development level such as frequency band 1 - several GHz, pulse operation, frequency band, output, efficiency, etc., which are general characteristics of HPEM generators. In particular, research on global R&D status centered on the US and Russia

Investigation of HPEM's effect on target

Analysis of EMP Junction Failure Threshold Principle of Semiconductors by HPEM

Threshold voltage calculation research analysis and recent research trend investigation

(2) High-power transient electromagnetic wave test

Design and device configuration using the FDTD EM simulation tool of the simulator for the effect experiment of high-power transient electromagnetic waves

Theoretical equation of electric field measuring device using E-field probe and design using CST EM simulation tool

E-field probe device configuration for measuring the electric field to be applied to the IC circuit

Simulation of the effect on the signal applied to the IC circuit

Effect simulation of high-power transient electromagnetic waves with a frequency of 2.45 GHz generated by the magnetron

Effect simulation according to the direction of the electric field applied to the IC circuit

Investigation of Threshold Characteristics of Semiconductors through Measurement Results

 

So, through this basic experimental study, we can expect the following.

Due to the development of the IT information age, the frequency of use of digital wireless information devices is increasing, and the demand for a new system capable of processing a lot of information quickly and anywhere is increasing. As such, as the use of information devices for the information age increases and the dependence on information devices increases, communication disorders such as failure, damage, and malfunction due to the influence of high-output transient electromagnetic waves on sensitive information devices, whether intentionally or unintentionally, are increasing. It is emerging as a more serious problem. In fact, many accidents have been reported. In particular, ISM (Industrial, Scientific and Medical) frequencies are allocated to 1GHz to 3GHz, which are the frequency bands used by various information devices, so failure of information devices and modulation and interference of received signals are expected problems. Therefore, it is time to take measures to protect information equipment against intentionally generated High Power Electromagnetic Waves (HPEM).

This study studies the interaction between transient electromagnetic waves and semiconductor devices, and examines the conditions such as failure, damage and malfunction to find out the maximum exposure to transient electromagnetic waves of sensitive communication devices. By constructing and conducting similar experiments on communication equipment as a system, it is possible to define the maximum transient electromagnetic wave allowed for all communication equipment. On the other hand, various hardening methods such as shielding to minimize the effect of excessive electromagnetic waves on semiconductors can be developed based on this research.

 

Unlike the analysis of EMP effects based on semiconductor devices related to AV Galerkin's equations, FEM (Finite Element Methods), EM eddy current computations, Conjugate Gradients Squared (CGS), and E-field Destruction eddy current, which are extensive in the existing reference, we have "Dependence of Irradiated High-power Electromagnetic Waves on the Failure Threshold Time of Semiconductors using a Closed Waveguide" was prepared using a vacuum element-based magnetron oscillator. This experimental paper is differentiated from other previous studies by analyzing the semiconductor device that can construct a high-power electric field generator as a method or technique.

Therefore, we applied a different field of approach, research method, and analysis method than the comment you mentioned.

In order to follow the comment you mentioned, you have to write a completely different manuscript. I am very sorry that your comments are sharp, sharp and good comments, but I cannot accommodate them all.

 

Regarding English grammar, we have already reviewed the English proofreading of the manuscript through the Native expert group. We have attached the Certificate for English Proofreading file for this.

 

Finally, we appreciate your heartfelt advice. I'm really sorry that I can't reflect all of your comments.

 

Sincerely yours with best regards,

Thank your very much for your consideration.

Dr. Min

Author Response File: Author Response.pdf

Reviewer 2 Report

electronics-1285381 

authors: Sun-Hong Min * , Jung-Il Kim , Matlabjon Sattorov , Seontae Kim , Dongpyo Hong , Seonmyeong Kim , Bong Hwan Hong , Chawon Park , Sukhwal Ma , Minho Kim , Kyo Chul Lee , Yong Jin Lee , Han Byul Kwon , Young Joon Yoo , Sang Yoon Park , Gun-Sik Park *

Title: Dependence of Irradiated High-power Electromagnetic Waves on the Failure Threshold Time of Semiconductors using a Closed Waveguide

In this paper, the dependence of irradiated HPEM on the failure threshold time is experimentally studied using a SN7442 IC in a WR430 closed waveguide simulator when the magnitude of the irradiated electric field generated from a magnetron oscillator is varied from 24 kV/m to 36 kV/m.

In principe this study is quite interesting and offers some potential for publication.

However the authors refer to the research background in an extremely non-specific and non-scientific manner. It would be good to compare to theoretical studies in the sub-ns regime and to different wavelengths.

Symmetry 11 (10), 1246; doi: 10.3390/sym11101246

Appl. Sci. 10 (5), 1836; doi: 10.3390/app10051836

The authors should commend on heat. How is cooling with water "In order to eliminate heat generation due to the high-power electromagnetic waves, the termination point is structured to perform refrigeration using circulating cooling water" sufficient for such rapid eat production ?

The authors should elaborate on switching effects and their destruction.

In general the manuscript is written in some very general, non-expert style, which is not prospected to receive a lot of interest by the community of experts. The manuscripts style must be profoundly revised.

 

 

Author Response

I cannot understand the comment of Reviewer #2 from a common sense. As the first author of international SCI/SCIE, I also am an expert in writing more than 10 issues. And I have reviewed many SCI journals. No matter how dissatisfied anyone are with the manuscript, there is a line that anyone follow suitably. Reviewer #2 didn't live up to that line.
Rather, the comment of reviewer #2 is irrational and illogical, and criticizes only the manuscript I'v e written without providing specific grounds.
If anyone look at the comment of Reviewer #2, it is to rewrite the manuscript altogether. I do not want to have my manuscript reviewed by such Reviewer #2.

Reviewer 3 Report

-The use of the word “simulator” may cause some confusion. The structure of the waveguide with the IC inside is called “simulator” as it tries to emulate a scenario where the IC is exposed to the high power electromagnetic pulses, but also you use an EM simulator to evaluate fields inside the waveguide in the probe and in the IC position. Maybe you could use emulation of a scenario for the first meaning.

-Whenever it is possible, I would add the equivalent power value to the fields expressed in kV/m.

-In the EM simulations of the waveguide did you use a dummy material to represent the IC inside the waveguide?

-Considering Fig. 5 it is not clear if you have used the EM simulator to optimize the coaxial probe length entering into the waveguide to maximize S21 or maybe you just wanted to stablish the coupling of the field to the probe for a fixed length?

-You should provide your definition of “destruction time”, as it seems the IC is always destroy, but it takes more or less time, depending on the field value.

-The range of E field between 22 and 36 kV/m is chosen because it is the one provided by the magnetron or because it was found that, the threshold field was around that value.

-Reading the article I would expect to see the range of field when the damage to the IC is reversible and it may operate again, but it is not clear. For example, If a 31kV/m field is applied only 1ms < 4ms, will the IC work again?

-Setup photo shown in fig. 8 is related to the schema shown in fig. 20? I see that the label “circulator” seems to be placed under a grooved or slotted waveguide, not in the circulator junction, and the water-cooled loads are not labeled. In fig.20 additional elements not shown in fig. 8 are added (detection).

-In my opinion the “discussion” paragraph is a bit disconnected with the rest, particularly from line 430. The proposal of an electron-antimatter pair detection based on a Penning-Malmberg trap can be considered as a consequence from the experiment or an application derived from the setup? Maybe it deserves a dedicated section.

On the other hand, I think that some parts of the discussion would match better in the introduction section (for example from line 394 to line 416).

Author Response

I carefully checked the reviewer's comments. He made sharp points with very good comments, and gave good words as well. I faithfully answered the reviewer's questions and advice, and reflected most of the points mentioned by the reviewer. It was a very helpful experience for me, and I am very grateful to the editor and the reviewer.

Author Response File: Author Response.pdf