40 GHz VCO and Frequency Divider in 28 nm FD-SOI CMOS Technology for Automotive Radar Sensors

Maiellaro, Giorgio; Caruso, Giovanni; Scaccianoce, Salvatore; Giacomini, Mauro; Scuderi, Angelo

doi:10.3390/electronics10172114

Open AccessArticle

40 GHz VCO and Frequency Divider in 28 nm FD-SOI CMOS Technology for Automotive Radar Sensors

by

Giorgio Maiellaro

¹,

Giovanni Caruso

¹,

Salvatore Scaccianoce

¹,

Mauro Giacomini

² and

Angelo Scuderi

^1,*

¹

STMicroelectronics, 95121 Catania, Italy

²

STMicroelectronics, 20864 Agrate Brianza, Italy

^*

Author to whom correspondence should be addressed.

Electronics 2021, 10(17), 2114; https://doi.org/10.3390/electronics10172114

Submission received: 29 June 2021 / Revised: 23 August 2021 / Accepted: 27 August 2021 / Published: 31 August 2021

(This article belongs to the Special Issue Millimeter-Wave-Integrated CMOS Radars and Communication Systems: Architecture and Circuit Designs)

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Abstract

This paper presents a 40 GHz voltage-controlled oscillator (VCO) and frequency divider chain fabricated in STMicroelectronics 28 nm ultrathin body and box (UTBB) fully depleted silicon-on-insulator (FD-SOI) complementary metal-oxide–semiconductor (CMOS) process with eight metal layers back-end-of-line (BEOL) option. VCOs architecture is based on an LC-tank with p-type metal-oxide–semiconductor (PMOS) cross-coupled transistors. VCOs exhibit a tuning range (TR) of 3.5 GHz by exploiting two continuous frequency tuning bands selectable via a single control bit. The measured phase noise (PN) at 38 GHz carrier frequency is −94.3 and −118 dBc/Hz at 1 and 10 MHz frequency offset, respectively. The high-frequency dividers, from 40 to 5 GHz, are made using three static CMOS current-mode logic (CML) Master-Slave D-type Flip-Flop stages. The whole divider factor is 2048. A CMOS toggle flip-flop architecture working at 5 GHz was adopted for low frequency dividers. The power dissipation of the VCO core and frequency divider chain are 18 and 27.8 mW from 1.8 and 1 V supply voltages, respectively. Circuit functionality and performance were proved at three junction temperatures (i.e., −40, 25, and 125 °C) using a thermal chamber.

Keywords: analog integrated circuits; CMOS integrated circuits; FD-SOI technology; millimeter-wave integrated circuits; voltage-controlled oscillators; frequency dividers

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MDPI and ACS Style

Maiellaro, G.; Caruso, G.; Scaccianoce, S.; Giacomini, M.; Scuderi, A. 40 GHz VCO and Frequency Divider in 28 nm FD-SOI CMOS Technology for Automotive Radar Sensors. Electronics 2021, 10, 2114. https://doi.org/10.3390/electronics10172114

AMA Style

Maiellaro G, Caruso G, Scaccianoce S, Giacomini M, Scuderi A. 40 GHz VCO and Frequency Divider in 28 nm FD-SOI CMOS Technology for Automotive Radar Sensors. Electronics. 2021; 10(17):2114. https://doi.org/10.3390/electronics10172114

Chicago/Turabian Style

Maiellaro, Giorgio, Giovanni Caruso, Salvatore Scaccianoce, Mauro Giacomini, and Angelo Scuderi. 2021. "40 GHz VCO and Frequency Divider in 28 nm FD-SOI CMOS Technology for Automotive Radar Sensors" Electronics 10, no. 17: 2114. https://doi.org/10.3390/electronics10172114

APA Style

Maiellaro, G., Caruso, G., Scaccianoce, S., Giacomini, M., & Scuderi, A. (2021). 40 GHz VCO and Frequency Divider in 28 nm FD-SOI CMOS Technology for Automotive Radar Sensors. Electronics, 10(17), 2114. https://doi.org/10.3390/electronics10172114

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

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40 GHz VCO and Frequency Divider in 28 nm FD-SOI CMOS Technology for Automotive Radar Sensors

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