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Hong J-Y, Chen C-Y, Ling D-C, Martínez I, González-Ruano C, Aliev FG. Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlO_x-Based Resistive Switching Memory Devices with Magneto-Resistive Responses. Electronics. 2021; 10(20):2525. https://doi.org/10.3390/electronics10202525

Hong, Jhen-Yong, Chun-Yen Chen, Dah-Chin Ling, Isidoro Martínez, César González-Ruano, and Farkhad G. Aliev. 2021. "Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlO_x-Based Resistive Switching Memory Devices with Magneto-Resistive Responses" Electronics 10, no. 20: 2525. https://doi.org/10.3390/electronics10202525

Hong, J.-Y., Chen, C.-Y., Ling, D.-C., Martínez, I., González-Ruano, C., & Aliev, F. G. (2021). Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlO_x-Based Resistive Switching Memory Devices with Magneto-Resistive Responses. Electronics, 10(20), 2525. https://doi.org/10.3390/electronics10202525