Raja, P.V.; Subramani, N.K.; Gaillard, F.; Bouslama, M.; Sommet, R.; Nallatamby, J.-C.
Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties. Electronics 2021, 10, 3096.
https://doi.org/10.3390/electronics10243096
AMA Style
Raja PV, Subramani NK, Gaillard F, Bouslama M, Sommet R, Nallatamby J-C.
Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties. Electronics. 2021; 10(24):3096.
https://doi.org/10.3390/electronics10243096
Chicago/Turabian Style
Raja, P. Vigneshwara, Nandha Kumar Subramani, Florent Gaillard, Mohamed Bouslama, Raphaël Sommet, and Jean-Christophe Nallatamby.
2021. "Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties" Electronics 10, no. 24: 3096.
https://doi.org/10.3390/electronics10243096
APA Style
Raja, P. V., Subramani, N. K., Gaillard, F., Bouslama, M., Sommet, R., & Nallatamby, J. -C.
(2021). Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties. Electronics, 10(24), 3096.
https://doi.org/10.3390/electronics10243096
