Lee, J.; Park, T.; Ahn, H.; Kwak, J.; Moon, T.; Shin, C.
Prediction Model for Random Variation in FinFET Induced by Line-Edge-Roughness (LER). Electronics 2021, 10, 455.
https://doi.org/10.3390/electronics10040455
AMA Style
Lee J, Park T, Ahn H, Kwak J, Moon T, Shin C.
Prediction Model for Random Variation in FinFET Induced by Line-Edge-Roughness (LER). Electronics. 2021; 10(4):455.
https://doi.org/10.3390/electronics10040455
Chicago/Turabian Style
Lee, Jinwoong, Taeeon Park, Hongjoon Ahn, Jihwan Kwak, Taesup Moon, and Changhwan Shin.
2021. "Prediction Model for Random Variation in FinFET Induced by Line-Edge-Roughness (LER)" Electronics 10, no. 4: 455.
https://doi.org/10.3390/electronics10040455
APA Style
Lee, J., Park, T., Ahn, H., Kwak, J., Moon, T., & Shin, C.
(2021). Prediction Model for Random Variation in FinFET Induced by Line-Edge-Roughness (LER). Electronics, 10(4), 455.
https://doi.org/10.3390/electronics10040455