Research on EDAC Schemes for Memory in Space Applications
Abstract
:1. Introduction
- (1)
- Data encoding: The configuration data are received through the UART, and then redundant encoding is performed by EDAC method.
- (2)
- Periodic readback checking: Check the data stored in the memory array periodically through the FPGA readback function.
- (3)
- Periodic scrubbing: According to the scrub interval set in advance, the memory array can be rewritten unconditionally by continuous scrubbing.
2. Present State-of-the-Art EDAC Schemes
2.1. TMR
2.2. Linear Block Code Schemes
2.3. TMR Based EDAC
2.4. Memory Scrubbing
3. A New Proposed EDAC Scheme
3.1. Cascaded Code Scheme
3.2. BCH
3.2.1. Encoding
3.2.2. Decoding
- (1)
- Computing the syndrome polynomial based on the input to the decoder.
- (2)
- Calculating the error location polynomial by the key equation.
- (3)
- Calculating the roots () of by Chien search algorithm, and correcting errors based on the roots:
3.3. CRC
3.3.1. Encoding
3.3.2. Decoding
3.4. Proposed EDAC Process
- No errors: Both the BCH_DE and the CRC_DE indicate that there are no errors.
- Single-bit or double-bit errors: If the decoding result of the BCH_DE is wrong, the decoded 51 bits data are encoded again by the BCH_EN and written to the blank area of the memory array. Using new encoded data and the old CRC redundant bits, the CRC_DE can identify whether the error has been corrected by the BCH_DE. If yes, overwrite the original data in the memory array with the new encoded data. Otherwise, it means that there are multiple-bit errors and the corresponding memory address should be marked.
- Multiple-bit errors: Other than the above multiple-bit errors, if the decoding result of the BCH_DE is right and the decoding result of the CRC_DE is wrong, it also means that there are multiple-bit errors and the corresponding memory address should be marked.
4. Experimental Results
5. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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System Monitored | Parameters |
---|---|
Memory Size | 32 M-Bytes |
Observation period | 2622 days, 29 November 2002–14 August 2010 |
Bits monitored | 268,435,456 |
Total number of errors | 265,649 |
No. of Single-bit errors | 261,905 (98.59%) |
No. of Double-byte errors | 3249 (1.223%) |
No. of Severe errors | 247 (0.093%) |
No. of Multiple-bit errors | 233 (0.087%) |
No. of Hardware errors | 15 (0.005%) |
Code | Scheme (n,k,d) | Code Rate | Bit Overhead | Complexity | |||
---|---|---|---|---|---|---|---|
Time | Space | ||||||
Hadamard | (16,5,8) | 7 | 3 | 31.25% | 220% | ||
Binary Golay | (23,12,7) | 6 | 3 | 52.17% | 91.66% | ) | |
Ternary Golay | (11,6,5) | 4 | 2 | 54.54% | 83% | ) | |
BCH | (15,7,5) | - | 2 | 46.67% | 114.29% | ||
(31,21,5) | - | 2 | 67.74% | 47.62% | |||
(63,51,5) | - | 2 | 80.95% | 23.53% | |||
(127,113,5) | - | 2 | 88.98% | 12.39% | |||
(255,239,5) | - | 2 | 93.73% | 6.69% | |||
4D Parity | (561,560) | - | 2 | 84.21% | 18.56% | ||
(2193,2048) | - | 2 | 87.67% | 13.28% |
No Errors | SED | SEC | DED | DEC | MED | MEC | |||
---|---|---|---|---|---|---|---|---|---|
BCH_EN | ✓ | ✓ | ✓ | ✓ | ✓ | ✓ | ✓ | ||
BCH_DE | ✓ | ✓ | ✓ | ✓ | ✓ | ✓ | ✓ | ✓ | ✓ |
CRC_EN | ✓ | ✓ | |||||||
CRC_DE | ✓ | ✓ | ✓ | ✓ | ✓ | ✓ | ✓ | ✓ | ✓ |
Scrubbing | ✓ | ✓ |
EDAC Type | TMR | EDAC-TMR 1 [4] | EDAC-TMR 2 [26] | The Proposed EDAC |
---|---|---|---|---|
EDAC overhead | 0 | 0 | 800% | 100% |
Memory overhead | 200% | 200% | 100% | 88.24% |
Time overhead | ||||
EDAC Capability | MEC-MED | DEC-DED | DEC-DED | MEC-MED |
Severe errors correction | NO | YES | YES | YES |
Corrected in-orbit errors | 98.7% | 100% | 100% | 100% |
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Chen, M.; Guo, C.; Chen, L.; Li, W.; Zhang, F.; Hu, X.; Xu, J. Research on EDAC Schemes for Memory in Space Applications. Electronics 2021, 10, 533. https://doi.org/10.3390/electronics10050533
Chen M, Guo C, Chen L, Li W, Zhang F, Hu X, Xu J. Research on EDAC Schemes for Memory in Space Applications. Electronics. 2021; 10(5):533. https://doi.org/10.3390/electronics10050533
Chicago/Turabian StyleChen, Mengfu, Chenguang Guo, Lei Chen, Wenjie Li, Fan Zhang, Xiaoxiang Hu, and Jiancheng Xu. 2021. "Research on EDAC Schemes for Memory in Space Applications" Electronics 10, no. 5: 533. https://doi.org/10.3390/electronics10050533
APA StyleChen, M., Guo, C., Chen, L., Li, W., Zhang, F., Hu, X., & Xu, J. (2021). Research on EDAC Schemes for Memory in Space Applications. Electronics, 10(5), 533. https://doi.org/10.3390/electronics10050533